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IRGB20B60PD1PBF - Infineon

Description: Trans IGBT Chip N-CH 600V 40A 215000mW 3-Pin(3+Tab) TO-220AB Tube

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PCB Footprints
IRGB20B60PD1PBF - Infineon PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO-220AB PACKAGE-ren1
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3D Models
IRGB20B60PD1PBF - Infineon  - 3D model - Transistor Outline, Vertical - TO-220AB PACKAGE-ren1
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IRGB20B60PD1PBF Details

  • Manufacturer Part Number:

    IRGB20B60PD1PBF

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • ECCN Code:

    EAR99

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    0

  • Additional Feature:

    HIGH RELIABILITY, LOW CONDUCTION LOSS

  • Case Connection:

    COLLECTOR

  • Collector Current-Max (IC):

    40 A

  • Collector-Emitter Voltage-Max:

    600 V

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • Fall Time-Max (tf):

    17 ns

  • Gate-Emitter Thr Voltage-Max:

    5 V

  • Gate-Emitter Voltage-Max:

    20 V

  • JEDEC-95 Code:

    TO-220AB

  • JESD-30 Code:

    R-PSFM-T3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Peak Reflow Temperature (Cel):

    NOT SPECIFIED

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    215 W

  • Qualification Status:

    Not Qualified

  • Rise Time-Max (tr):

    8 ns

  • Surface Mount:

    NO

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    NOT SPECIFIED

  • Transistor Application:

    POWER CONTROL

  • Transistor Element Material:

    SILICON

  • Turn-off Time-Nom (toff):

    138 ns

  • Turn-on Time-Nom (ton):

    25 ns

IRGB20B60PD1PBF Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for the IRGB20B60PD1PBF is -40°C to 150°C.
  • Proper cooling can be achieved by using a heat sink with a thermal resistance of less than 1.5 K/W, and ensuring good thermal contact between the IGBT and heat sink.
  • The recommended gate resistor value for the IRGB20B60PD1PBF is between 10 ohms and 100 ohms, depending on the specific application and switching frequency.
  • Yes, the IRGB20B60PD1PBF can be used in a parallel configuration, but it's essential to ensure that the gate drive signals are properly synchronized and that the IGBTs are matched in terms of threshold voltage and transconductance.
  • The maximum allowable voltage transient for the IRGB20B60PD1PBF is 120% of the maximum rated voltage, but it's recommended to limit voltage transients to 10% of the maximum rated voltage to ensure reliable operation.

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IRGB20B60PD1PBF Overview

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