Part Image

IRL2505PBF - Infineon

Description: MOSFET N-Ch 55V 104A LogicFET TO220AB International Rectifier IRL2505PBF N-channel MOSFET Transistor, 104 A, 55 V, 3-Pin TO-220AB

Download IRL2505PBF Model
Schematic
symbols
Schematic symbol is unavailable for download
PCB
footprints
PCB footprint is unavailable for download
3D
models
3D model is unavailable for download
PCB Footprints
IRL2505PBF - Infineon PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO-220AB_2
click to zoom
3D Models
IRL2505PBF - Infineon  - 3D model - Transistor Outline, Vertical - TO-220AB_2
click to zoom

IRL2505PBF Details

  • Manufacturer Part Number:

    IRL2505PBF

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • ECCN Code:

    EAR99

  • HTS Code:

    8541.29.00.95

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    0

  • Additional Feature:

    AVALANCHE RATED, HIGH RELIABILITY, LOGIC LEVEL COMPATIBLE

  • Avalanche Energy Rating (Eas):

    500 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    55 V

  • Drain Current-Max (ID):

    104 A

  • Drain-source On Resistance-Max:

    0.01 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-220AB

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    150 W

  • Pulsed Drain Current-Max (IDM):

    360 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Finish:

    Tin (Sn)

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

IRL2505PBF Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for the IRL2505PBF is -55°C to 175°C.
  • To ensure proper cooling, make sure to provide a heat sink with a thermal resistance of less than 10°C/W and ensure good airflow around the device.
  • The recommended gate drive voltage for the IRL2505PBF is between 10V and 15V, with a maximum of 20V.
  • Yes, the IRL2505PBF is suitable for high-frequency switching applications up to 1 MHz, but ensure proper PCB layout and decoupling to minimize parasitic inductance and capacitance.
  • Use a voltage clamp or a zener diode to protect against overvoltage, and consider adding a current sense resistor and a fuse to protect against overcurrent.

Trust Checks

This model has been provided by community users.
Community Provided
This model has been verified by system checks.
System Verified
This model has been reviewed by community users.
Community Approved
Sponsored

IRL2505PBF Overview

Use the download button to access the IRL2505PBF schematic symbol, PCB footprint, and 3D model.
To find more CAD model downloads similar to this part, try a partial part number search, like IRL25, or try a keyword search, such as Power Field-Effect Transistors

Parts related to IRL2505PBF

Showing 0 results

IRL2505PBF Alternates

Showing results

Image Part Number Model
Part Image IRL2505 International Rectifier

Power Field-Effect Transistor, 104A I(D), 55V, 0.01ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

Part Image IRL2505 Infineon Technologies AG

Power Field-Effect Transistor, 104A I(D), 55V, 0.01ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB