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IRL520NSPBF - Infineon

Description: N-Channel 100 V 10A (Tc) 3.8W (Ta), 48W (Tc) Surface Mount D2PAK

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IRL520NSPBF - Infineon PCB footprint - Other - Other - D2PAK_2024-2
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IRL520NSPBF Details

  • Manufacturer Part Number:

    IRL520NSPBF

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • ECCN Code:

    EAR99

  • HTS Code:

    8541.29.00.95

  • Factory Lead Time:

    4 Weeks

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    0

  • Additional Feature:

    AVALANCHE RATED

  • Avalanche Energy Rating (Eas):

    85 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    100 V

  • Drain Current-Max (ID):

    10 A

  • Drain-source On Resistance-Max:

    0.22 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    50 pF

  • JESD-30 Code:

    R-PSSO-G2

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    2

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation Ambient-Max:

    3.8 W

  • Power Dissipation-Max (Abs):

    48 W

  • Pulsed Drain Current-Max (IDM):

    35 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    MATTE TIN OVER NICKEL

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

IRL520NSPBF Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for the IRL520NSPBF is -55°C to 150°C.
  • Proper cooling can be achieved by using a heat sink, ensuring good thermal contact between the device and the heat sink, and providing adequate airflow.
  • The recommended gate drive voltage for the IRL520NSPBF is between 10V and 15V.
  • Yes, the IRL520NSPBF is suitable for high-frequency applications up to 1 MHz, but the user should ensure that the device is properly driven and the layout is optimized for high-frequency operation.
  • Overvoltage protection can be achieved using a voltage clamp or a zener diode, while overcurrent protection can be achieved using a current sense resistor and a comparator or a dedicated overcurrent protection IC.

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IRL520NSPBF Overview

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Part Image IRL520NSTRLPBF International Rectifier

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Part Image IRF520NSPBF Infineon Technologies AG

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For a full list of alternate parts for IRL520NSPBF, check out Findchips.com