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IRLL024NTRPBF - Infineon

Description: Infineon IRLL024NTRPBF N-channel MOSFET, 4.4 A, 55 V HEXFET, 3+Tab-Pin SOT-223

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PCB Footprints
IRLL024NTRPBF - Infineon PCB footprint - SOT223 (3-Pin) - SOT223 (3-Pin) - SOT-223 (TO-261AA)_2021
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3D Models
IRLL024NTRPBF - Infineon  - 3D model - SOT223 (3-Pin) - SOT-223 (TO-261AA)_2021
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IRLL024NTRPBF Details

  • Manufacturer Part Number:

    IRLL024NTRPBF

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • HTS Code:

    8541.29.00.95

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    5.4

  • Additional Feature:

    AVALANCHE RATED, ULTRA-LOW RESISTANCE

  • Avalanche Energy Rating (Eas):

    120 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    55 V

  • Drain Current-Max (ID):

    3.1 A

  • Drain-source On Resistance-Max:

    0.065 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-261AA

  • JESD-30 Code:

    R-PDSO-G4

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    4

  • Operating Mode:

    ENHANCEMENT MODE

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Pulsed Drain Current-Max (IDM):

    12 A

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn)

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

IRLL024NTRPBF Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for the IRLL024NTRPBF is -55°C to 150°C.
  • The recommended PCB footprint for the IRLL024NTRPBF is a 5-pin SOT-23 package with a minimum pad size of 1.3mm x 1.3mm.
  • Yes, the IRLL024NTRPBF is qualified for high-reliability applications, including automotive and industrial systems, due to its robust design and manufacturing process.
  • The typical turn-on and turn-off time for the IRLL024NTRPBF is around 10-20ns, depending on the specific application and operating conditions.
  • Yes, the IRLL024NTRPBF is compatible with lead-free soldering processes, including reflow soldering and wave soldering.

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IRLL024NTRPBF Overview

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IRLL024NTRPBF Alternates

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Image Part Number Model
Part Image AUIRLL024NTR International Rectifier

Power Field-Effect Transistor, 3.1A I(D), 55V, 0.065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA

Part Image IRLL024NTRPBF International Rectifier

Power Field-Effect Transistor, 4.4A I(D), 55V, 0.065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA

Part Image AUIRLL024N International Rectifier

Power Field-Effect Transistor, 3.1A I(D), 55V, 0.065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA

Part Image IRLL024N Infineon Technologies AG

Power Field-Effect Transistor, 4.4A I(D), 55V, 0.065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA

Part Image IRLL024NTR International Rectifier

Power Field-Effect Transistor, 4.4A I(D), 55V, 0.065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA

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