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IRLML2803TRPBF - Infineon

Description: IRLML2803TRPBF N-Channel MOSFET, 1.2 A, 30 V HEXFET, 3-Pin SOT-23 Infineon

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PCB Footprints
IRLML2803TRPBF - Infineon PCB footprint - SOT23 (3-Pin) - SOT23 (3-Pin) - SOT-23-ren9
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3D Models
IRLML2803TRPBF - Infineon  - 3D model - SOT23 (3-Pin) - SOT-23-ren9
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IRLML2803TRPBF Details

  • Manufacturer Part Number:

    IRLML2803TRPBF

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    18 Weeks

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    6.9

  • Additional Feature:

    HIGH RELIABILITY

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    30 V

  • Drain Current-Max (ID):

    1.2 A

  • Drain-source On Resistance-Max:

    0.25 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-236AB

  • JESD-30 Code:

    R-PDSO-G3

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    0.54 W

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    Tin (Sn)

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

IRLML2803TRPBF Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for the IRLML2803TRPBF is -40°C to 150°C.
  • To ensure reliability, it's essential to follow proper thermal management practices, such as providing adequate heat sinking, using thermal interface materials, and minimizing thermal resistance.
  • To minimize EMI, it's recommended to use a multi-layer PCB with a solid ground plane, keep the layout compact, and use shielding or filtering components as needed.
  • Yes, the IRLML2803TRPBF is suitable for high-frequency switching applications up to 1 MHz, but it's essential to consider the device's switching characteristics, gate drive requirements, and PCB layout to ensure reliable operation.
  • The gate resistor value depends on the specific application requirements, such as switching frequency, voltage, and current. A general guideline is to use a value between 10 Ω to 100 Ω, but it's recommended to consult the application note or contact Infineon support for specific guidance.

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IRLML2803TRPBF Overview

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Part Image IRLML2803TRPBF International Rectifier

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Part Image IRLML2803GTRPBF International Rectifier

Small Signal Field-Effect Transistor, 1.2A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB

Part Image IRLML2803TR International Rectifier

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Part Image IRLML2803TRHR International Rectifier

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