Description:MJD200 is the complementary NPN device; High Current-Gain - Bandwidth Product - fT = 65 MHz (Min) @ IC = 100 mAdc; Annular Construction for Low Leakage - ICBO = 100 nAdc @ Rated VCB; These Devices are Pb-Free and are RoHS Compliant; Low Collector-Emitter Saturation Voltage - VCE(sat) = 0.30 Vdc (Max) @ IC = 500 mAdc = 0.75 Vdc (Max) @ IC = 2.0 Adc; Collector-Emitter Sustaining Voltage - VCEO(sus) = 25 Vdc (Min) @ IC = 10 mAdc; NJV Prefix for Automotive and Other Applications Requiring Unique Site and Contro
The maximum operating temperature range for the MJD210T4G is -55°C to 150°C.
To ensure proper biasing, the MJD210T4G requires a minimum of 10mA of collector current and a maximum of 100mA. Additionally, the base-emitter voltage should be between 0.65V and 0.85V.
For optimal thermal performance, it is recommended to use a PCB with a thermal pad and a heat sink. The device should be placed on a copper plane with a minimum size of 1 inch x 1 inch. Additionally, a thermal interface material (TIM) should be used between the device and the heat sink.
To prevent ESD damage, it is recommended to use an ESD wrist strap or mat when handling the MJD210T4G. Additionally, all equipment and tools should be grounded, and the device should be stored in an anti-static bag or container when not in use.
The recommended soldering conditions for the MJD210T4G are a peak temperature of 260°C, a dwell time of 10-30 seconds, and a soldering iron temperature of 350°C.
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MJD210T4G Overview
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