MJD21 Model Download Search Results

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Image Part Number D.S Description Package Category Prices / Stock Model Action
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MJD210G onsemi
1 MJD200 is the complementary NPN device; High Current-Gain - Bandwidth Product - fT = 65 MHz (Min) @ IC = 100 mAdc; Annular Construction for Low Leakage - ICBO = 100 nAdc @ Rated VCB; These Devices are Pb-Free and are RoHS Compliant; Low Collector-Emitter Saturation Voltage - VCE(sat) = 0.30 Vdc (Max) @ IC = 500 mAdc = 0.75 Vdc (Max) @ IC = 2.0 Adc; Collector-Emitter Sustaining Voltage - VCEO(sus) = 25 Vdc (Min) @ IC = 10 mAdc; NJV Prefix for Automotive and Other Applications Requiring Unique Site and Contro Other MJD210G 1 Download Model
Part Image Part Image 1 MJD200 is the complementary NPN device; High Current-Gain - Bandwidth Product - fT = 65 MHz (Min) @ IC = 100 mAdc; Annular Construction for Low Leakage - ICBO = 100 nAdc @ Rated VCB; These Devices are Pb-Free and are RoHS Compliant; Low Collector-Emitter Saturation Voltage - VCE(sat) = 0.30 Vdc (Max) @ IC = 500 mAdc = 0.75 Vdc (Max) @ IC = 2.0 Adc; Collector-Emitter Sustaining Voltage - VCEO(sus) = 25 Vdc (Min) @ IC = 10 mAdc; NJV Prefix for Automotive and Other Applications Requiring Unique Site and Contro Other MJD210RLG 1 Download Model
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MJD210 Rochester Electronics LLC
1 5A, 25V, PNP, Si, POWER TRANSISTOR, PLASTIC, CASE 369A, DPAK-3 MJD210 0 Build or Request
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MJD210(TO-252) Unisonic Technologies Co Ltd
1 Power Bipolar Transistor, 1-Element, PNP MJD210(TO-252) 0 Build or Request
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MJD210 Freescale Semiconductor
1 TRANSISTOR,BJT,PNP,24V V(BR)CEO,5A I(C),TO-252 MJD210 0 Build or Request
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MJD210-1 Freescale Semiconductor
1 TRANSISTOR,BJT,PNP,24V V(BR)CEO,5A I(C),TO-221 MJD210-1 0 Build or Request
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MJD210-TN3-T Unisonic Technologies Co Ltd
1 Power Bipolar Transistor MJD210-TN3-T 0 Build or Request
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MJD210RL Freescale Semiconductor
1 TRANSISTOR,BJT,PNP,24V V(BR)CEO,5A I(C),TO-252 MJD210RL 0 Build or Request
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MJD210TF Fairchild Semiconductor Corporation
1 Power Bipolar Transistor, 5A I(C), 25V V(BR)CEO, 1-Element, PNP, Silicon, TO-252, Plastic/Epoxy, 2 Pin MJD210TF 0 Build or Request
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MJD210-1 Motorola Semiconductor Products
1 Power Bipolar Transistor, 5A I(C), 25V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 3 Pin MJD210-1 0 Build or Request
Part Image Part Image 1 MJD200 is the complementary NPN device; High Current-Gain - Bandwidth Product - fT = 65 MHz (Min) @ IC = 100 mAdc; Annular Construction for Low Leakage - ICBO = 100 nAdc @ Rated VCB; These Devices are Pb-Free and are RoHS Compliant; Low Collector-Emitter Saturation Voltage - VCE(sat) = 0.30 Vdc (Max) @ IC = 500 mAdc = 0.75 Vdc (Max) @ IC = 2.0 Adc; Collector-Emitter Sustaining Voltage - VCEO(sus) = 25 Vdc (Min) @ IC = 10 mAdc; NJV Prefix for Automotive and Other Applications Requiring Unique Site and Contro MJD210T4G 1 Download Model
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MJD210L(TO-252) Unisonic Technologies Co Ltd
1 Power Bipolar Transistor, 1-Element, PNP MJD210L(TO-252) 0 Build or Request
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MJD210-I Fairchild Semiconductor Corporation
1 5 A, 25 V, PNP, Si, POWER TRANSISTOR, IPAK-3 MJD210-I 0 Build or Request
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MJD210T4 onsemi
1 Power Bipolar Transistor, 5A I(C), 25V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 2 Pin MJD210T4 0 Build or Request
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MJD210RL Rochester Electronics LLC
1 5A, 25V, PNP, Si, POWER TRANSISTOR, PLASTIC, CASE 369A, DPAK-3 MJD210RL 0 Build or Request
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MJD210-TN3-R Unisonic Technologies Co Ltd
1 Power Bipolar Transistor MJD210-TN3-R 0 Build or Request
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MJD210-I onsemi
1 Power Bipolar Transistor, 5A I(C), 25V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 3 Pin MJD210-I 0 Build or Request
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MJD210 STMicroelectronics
1 Power Bipolar Transistor, 5A I(C), 25V V(BR)CEO, 1-Element, PNP, Silicon, TO-252, Plastic/Epoxy, 2 Pin MJD210 0 Build or Request
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MJD210 Motorola Semiconductor Products
1 Power Bipolar Transistor, 5A I(C), 25V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 2 Pin MJD210 0 Build or Request
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MJD210TF Rochester Electronics LLC
1 5A, 25V, PNP, Si, POWER TRANSISTOR, TO-252, DPAK-3 MJD210TF 0 Build or Request
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MJD210G-TN3-R Unisonic Technologies Co Ltd
1 Power Bipolar Transistor, 5A I(C), 25V V(BR)CEO, 1-Element, PNP, Silicon, TO-252, Plastic/Epoxy, 2 Pin MJD210G-TN3-R 0 Build or Request
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MJD210L-TM3-T Unisonic Technologies Co Ltd
1 Power Bipolar Transistor, 5A I(C), 25V V(BR)CEO, 1-Element, PNP, Silicon, TO-251, Plastic/Epoxy, 3 Pin MJD210L-TM3-T 0 Build or Request
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MJD210G-TN3-T Unisonic Technologies Co Ltd
1 Power Bipolar Transistor, 5A I(C), 25V V(BR)CEO, 1-Element, PNP, Silicon, TO-252, Plastic/Epoxy, 2 Pin MJD210G-TN3-T 0 Build or Request
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MJD210 onsemi
1 Power Bipolar Transistor, 5A I(C), 25V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 2 Pin MJD210 0 Build or Request
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MJD210 Unisonic Technologies Co Ltd
1 Power Bipolar Transistor, 1-Element, PNP MJD210 0 Build or Request
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