Part Image

MJD210G - onsemi

Description: MJD200 is the complementary NPN device; High Current-Gain - Bandwidth Product - fT = 65 MHz (Min) @ IC = 100 mAdc; Annular Construction for Low Leakage - ICBO = 100 nAdc @ Rated VCB; These Devices are Pb-Free and are RoHS Compliant; Low Collector-Emitter Saturation Voltage - VCE(sat) = 0.30 Vdc (Max) @ IC = 500 mAdc = 0.75 Vdc (Max) @ IC = 2.0 Adc; Collector-Emitter Sustaining Voltage - VCEO(sus) = 25 Vdc (Min) @ IC = 10 mAdc; NJV Prefix for Automotive and Other Applications Requiring Unique Site and Contro

Download MJD210G Model
Schematic
symbols
Schematic symbol is unavailable for download
PCB
footprints
PCB footprint is unavailable for download
3D
models
3D model is unavailable for download
PCB Footprints
MJD210G - onsemi PCB footprint - Other - Other - DPAK (SINGLE GAUGE) TO-252 (369C) ISSUE F_1
click to zoom
3D Models
MJD210G - onsemi  - 3D model - Other - DPAK (SINGLE GAUGE) TO-252 (369C) ISSUE F_1
click to zoom

MJD210G Details

  • Manufacturer Part Number:

    MJD210G

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    DPAK (SINGLE GAUGE) TO-252

  • Pin Count:

    3

  • Manufacturer Package Code:

    369C

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    8 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    4

  • Case Connection:

    COLLECTOR

  • Collector Current-Max (IC):

    5 A

  • Collector-Emitter Voltage-Max:

    25 V

  • Configuration:

    SINGLE

  • DC Current Gain-Min (hFE):

    10

  • JEDEC-95 Code:

    TO-252

  • JESD-30 Code:

    R-PSSO-G2

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    2

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    PNP

  • Power Dissipation-Max (Abs):

    12.5 W

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    AMPLIFIER

  • Transistor Element Material:

    SILICON

  • Transition Frequency-Nom (fT):

    65 MHz

MJD210G Frequently Asked Questions (FAQs)

  • The MJD210G can operate from -55°C to 150°C, but the recommended operating temperature range is -40°C to 125°C for optimal performance.
  • The MJD210G requires a bias voltage of 5V to 15V, and the recommended bias current is 1mA to 10mA. Ensure the bias voltage is stable and within the recommended range for optimal performance.
  • The maximum power dissipation for the MJD210G is 1.5W. Ensure the device is properly heat-sinked and the ambient temperature is within the recommended range to prevent overheating.
  • Yes, the MJD210G can be used in switching applications, but ensure the switching frequency is within the recommended range (up to 100 kHz) and the device is properly biased and heat-sinked.
  • Handle the MJD210G with ESD-protective equipment, such as wrist straps and mats, and ensure the device is stored in an ESD-protective package. Avoid touching the device's pins or leads to prevent ESD damage.

Trust Checks

This model has been built in collaboration with the manufacturer.
Manufacturer Collaborated
This model has been verified by system checks.
System Verified
This model has been reviewed by community users.
Community Approved
Sponsored

MJD210G Overview

Use the download button to access the MJD210G schematic symbol, PCB footprint, and 3D model.
To find more CAD model downloads similar to this part, try a partial part number search, like MJD21, or try a keyword search, such as Power Bipolar Transistors

Parts related to MJD210G

Showing 0 results

MJD210G Alternates

Showing results

Image Part Number Model
Part Image CJD210BK Central Semiconductor Corp

Power Bipolar Transistor, 5A I(C), 25V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 2 Pin

Part Image CJD210 Central Semiconductor Corp

Power Bipolar Transistor, 5A I(C), 25V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 2 Pin

Part Image MJD210RL onsemi

Power Bipolar Transistor, 5A I(C), 25V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 2 Pin

Part Image MJD210T4 onsemi

Power Bipolar Transistor, 5A I(C), 25V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 2 Pin

Part Image MJD210 STMicroelectronics

Power Bipolar Transistor, 5A I(C), 25V V(BR)CEO, 1-Element, PNP, Silicon, TO-252, Plastic/Epoxy, 2 Pin

For a full list of alternate parts for MJD210G, check out Findchips.com