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MJD210RLG - onsemi

Description: MJD200 is the complementary NPN device; High Current-Gain - Bandwidth Product - fT = 65 MHz (Min) @ IC = 100 mAdc; Annular Construction for Low Leakage - ICBO = 100 nAdc @ Rated VCB; These Devices are Pb-Free and are RoHS Compliant; Low Collector-Emitter Saturation Voltage - VCE(sat) = 0.30 Vdc (Max) @ IC = 500 mAdc = 0.75 Vdc (Max) @ IC = 2.0 Adc; Collector-Emitter Sustaining Voltage - VCEO(sus) = 25 Vdc (Min) @ IC = 10 mAdc; NJV Prefix for Automotive and Other Applications Requiring Unique Site and Contro

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MJD210RLG - onsemi - PCB symbol
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MJD210RLG - onsemi PCB footprint - Other - Other - DPAK (SINGLE GAUGE) TO-252 (369C) ISSUE F_1
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MJD210RLG - onsemi - 3D model - Other - DPAK (SINGLE GAUGE) TO-252 (369C) ISSUE F_1
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MJD210RLG Details

  • Manufacturer Part Number:

    MJD210RLG

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    DPAK (SINGLE GAUGE) TO-252

  • Pin Count:

    3

  • Manufacturer Package Code:

    369C

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    8 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    4

  • Case Connection:

    COLLECTOR

  • Collector Current-Max (IC):

    5 A

  • Collector-Emitter Voltage-Max:

    25 V

  • Configuration:

    SINGLE

  • DC Current Gain-Min (hFE):

    10

  • JESD-30 Code:

    R-PSSO-G2

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    2

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    PNP

  • Power Dissipation-Max (Abs):

    12.5 W

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    AMPLIFIER

  • Transistor Element Material:

    SILICON

  • Transition Frequency-Nom (fT):

    65 MHz

MJD210RLG Frequently Asked Questions (FAQs)

  • A thermal pad on the bottom of the package should be connected to a large copper area on the PCB to dissipate heat. The copper area should be connected to a ground plane or a heat sink to further improve thermal performance.
  • The MJD210RLG requires a bias voltage of 5V to 15V, and the recommended bias current is 1mA to 10mA. The bias voltage and current should be adjusted according to the specific application requirements.
  • The maximum SOA for the MJD210RLG is defined by the voltage and current ratings specified in the datasheet. Operating the device outside of these ratings can lead to reduced reliability or even damage.
  • The MJD210RLG is sensitive to ESD. Handling the device by its package or pins can cause damage. Use ESD-safe handling and storage procedures, and consider using ESD protection devices in the circuit design.
  • Store the MJD210RLG in a dry, cool place, away from direct sunlight and moisture. Handle the device by its package or pins only when necessary, and use ESD-safe materials and tools.

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MJD210RLG Overview

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MJD210RLG Alternates

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For a full list of alternate parts for MJD210RLG, check out Findchips.com