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SI2324DS-T1-GE3 - Vishay

Description: N-Channel 100 V 2.3A (Tc) 1.25W (Ta), 2.5W (Tc) Surface Mount SOT-23-3 (TO-236)

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SI2324DS-T1-GE3 Details

  • Manufacturer Part Number:

    SI2324DS-T1-GE3

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Package Description:

    HALOGEN FREE AND ROHS COMPLIANT PACKAGE-3

  • Country Of Origin:

    Israel

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    8 Weeks

  • Manufacturer:

    Vishay Intertechnologies

  • YTEOL:

    7

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    100 V

  • Drain Current-Max (ID):

    2.3 A

  • Drain-source On Resistance-Max:

    0.234 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-236AB

  • JESD-30 Code:

    R-PDSO-G3

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    2.5 W

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    MATTE TIN

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

SI2324DS-T1-GE3 Frequently Asked Questions (FAQs)

  • The recommended PCB footprint for the SI2324DS-T1-GE3 is a standard SOT23-6 package with a 1.8mm x 1.35mm body size. A minimum pad size of 0.5mm x 0.5mm is recommended for reliable soldering.
  • To ensure the SI2324DS-T1-GE3 operates within its recommended operating conditions, maintain a supply voltage between 1.8V and 5.5V, and keep the junction temperature below 150°C. Also, ensure the input voltage does not exceed the maximum rating of 5.5V.
  • The maximum current rating for the SI2324DS-T1-GE3 is 100mA per channel. Exceeding this rating may cause the device to overheat or fail prematurely.
  • To prevent ESD damage, handle the SI2324DS-T1-GE3 with an anti-static wrist strap or mat, and ensure the workspace is ESD-protected. Avoid touching the device's pins or exposing it to static electricity.
  • The recommended storage temperature for the SI2324DS-T1-GE3 is between -40°C and 125°C. Storing the device outside this range may affect its reliability or performance.

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SI2324DS-T1-GE3 Overview

Use the download button to access the SI2324DS-T1-GE3 3D model. You can still request or build the schematic symbol and PCB footprint by using the respective build or request forms on this page.
To find more CAD model downloads similar to this part, try a partial part number search, like SI232, or try a keyword search, such as Small Signal Field-Effect Transistors

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Part Image SI2324DS-T1-GE3 Vishay Siliconix

Small Signal Field-Effect Transistor, 2.3A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB

Part Image SI2324DS-T1-BE3 Vishay Intertechnologies

Small Signal Field-Effect Transistor