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SI3473CDV-T1-GE3 - Vishay

Description: Vishay SI3473CDV-T1-GE3 P-channel MOSFET, 8 A, 12 V, 6-Pin TSOP6

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Symbol
SI3473CDV-T1-GE3 - Vishay - PCB symbol
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PCB Footprints
SI3473CDV-T1-GE3 - Vishay PCB footprint - SOT23 (6-Pin) - SOT23 (6-Pin) - TSOP 6LEAD_1
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3D Models
SI3473CDV-T1-GE3 - Vishay - 3D model - SOT23 (6-Pin) - TSOP 6LEAD_1
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SI3473CDV-T1-GE3 Details

  • Manufacturer Part Number:

    SI3473CDV-T1-GE3

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Not Recommended

  • Package Description:

    HALOGEN FREE AND ROHS COMPLIANT, TSOP-6

  • Country Of Origin:

    USA

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    15 Weeks

  • Manufacturer:

    Vishay Intertechnologies

  • YTEOL:

    3

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    12 V

  • Drain Current-Max (ID):

    8 A

  • Drain-source On Resistance-Max:

    0.022 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    520 pF

  • JESD-30 Code:

    R-PDSO-G6

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    6

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    P-CHANNEL

  • Power Dissipation-Max (Abs):

    4.2 W

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn)

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

SI3473CDV-T1-GE3 Frequently Asked Questions (FAQs)

  • The recommended PCB footprint for the SI3473CDV-T1-GE3 is a 6-pin SOT23 package with a minimum pad size of 1.3 mm x 1.3 mm and a thermal pad size of 2.5 mm x 2.5 mm.
  • To ensure the device operates within the recommended operating conditions, ensure the input voltage is within the specified range (1.8 V to 5.5 V), the ambient temperature is within the specified range (-40°C to 125°C), and the device is not exposed to excessive moisture or humidity.
  • The maximum power dissipation of the SI3473CDV-T1-GE3 is 1.4 W at an ambient temperature of 25°C. However, this value may vary depending on the specific application and operating conditions.
  • To handle ESD protection for the SI3473CDV-T1-GE3, ensure that the device is handled and stored in an ESD-protected environment, and follow proper ESD handling procedures during assembly and testing.
  • The recommended storage temperature range for the SI3473CDV-T1-GE3 is -40°C to 125°C, and the recommended storage humidity range is 20% to 80% relative humidity.

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SI3473CDV-T1-GE3 Overview

Use the download button to access the SI3473CDV-T1-GE3 schematic symbol, PCB footprint, and 3D model.
To find more CAD model downloads similar to this part, try a partial part number search, like SI347, or try a keyword search, such as Small Signal Field-Effect Transistors

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