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SI3590DV-T1-GE3 - Vishay

Description: MOSFET -30V Vds 12V Vgs TSOP-6 N&P PAIR

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SI3590DV-T1-GE3 - Vishay - PCB symbol
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PCB Footprints
SI3590DV-T1-GE3 - Vishay PCB footprint - SOT23 (6-Pin) - SOT23 (6-Pin) - TSOP-6
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3D Models
SI3590DV-T1-GE3 - Vishay - 3D model - SOT23 (6-Pin) - TSOP-6
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SI3590DV-T1-GE3 Details

  • Manufacturer Part Number:

    SI3590DV-T1-GE3

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Package Description:

    HALOGEN FREE AND ROHS COMPLIANT, TSOP-6

  • ECCN Code:

    EAR99

  • Manufacturer:

    Vishay Intertechnologies

  • YTEOL:

    0

  • Configuration:

    SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    30 V

  • Drain Current-Max (ID):

    2.5 A

  • Drain-source On Resistance-Max:

    0.077 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JESD-30 Code:

    R-PDSO-G6

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    2

  • Number of Terminals:

    6

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL AND P-CHANNEL

  • Power Dissipation-Max (Abs):

    1.15 W

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn)

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

SI3590DV-T1-GE3 Frequently Asked Questions (FAQs)

  • The recommended PCB footprint for the SI3590DV-T1-GE3 is a 5-pin SOT23 package with a minimum pad size of 1.3 mm x 1.3 mm and a thermal pad size of 2.5 mm x 2.5 mm.
  • To ensure the SI3590DV-T1-GE3 operates within its SOA, monitor the device's junction temperature, voltage, and current. Ensure the device is properly heatsinked, and the PCB is designed to minimize thermal resistance.
  • The maximum allowed voltage on the enable pin (EN) of the SI3590DV-T1-GE3 is 6 V. Exceeding this voltage may damage the device.
  • The SI3590DV-T1-GE3 is rated for operation up to 150°C. However, the device's performance and reliability may degrade at high temperatures. Ensure proper thermal management and derate the device's specifications accordingly.
  • To troubleshoot issues with the SI3590DV-T1-GE3, check the device's input and output voltages, current, and temperature. Verify the device is properly soldered and the PCB is free of defects. Consult the datasheet and application notes for guidance.

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SI3590DV-T1-GE3 Overview

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SI3590DV-T1-GE3 Alternates

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Part Image SI3590DV-T1-GE3 Vishay Siliconix

Small Signal Field-Effect Transistor, 2.5A I(D), 30V, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET