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SUD23N06-31-GE3 - Vishay

Description: Vishay SUD23N06-31-GE3 N-channel MOSFET Transistor, 23 A, 60 V, 3-Pin TO-252

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SUD23N06-31-GE3 - Vishay PCB footprint - Other - Other - TO-252AA_3
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SUD23N06-31-GE3 Details

  • Manufacturer Part Number:

    SUD23N06-31-GE3

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Package Description:

    HALOGEN FREE AND ROHS COMPLIANT PACKAGE-3

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    8 Weeks

  • Manufacturer:

    Vishay Intertechnologies

  • YTEOL:

    5

  • Avalanche Energy Rating (Eas):

    20 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    60 V

  • Drain Current-Max (ID):

    9.1 A

  • Drain-source On Resistance-Max:

    0.031 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-252

  • JESD-30 Code:

    R-PSSO-G2

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    2

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    31.25 W

  • Pulsed Drain Current-Max (IDM):

    50 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn)

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

SUD23N06-31-GE3 Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for the SUD23N06-31-GE3 is -55°C to 175°C.
  • Yes, the SUD23N06-31-GE3 is RoHS compliant, meaning it meets the European Union's Restriction of Hazardous Substances directive.
  • The typical gate charge for the SUD23N06-31-GE3 is around 20 nC.
  • Yes, the SUD23N06-31-GE3 is suitable for high-reliability applications, such as aerospace, defense, and medical devices, due to its high-quality manufacturing process and rigorous testing.
  • The recommended gate resistor value for the SUD23N06-31-GE3 is typically in the range of 1 kΩ to 10 kΩ, depending on the specific application and switching frequency.

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SUD23N06-31-GE3 Overview

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Part Image SUD23N06-31-GE3 Vishay Siliconix

Power Field-Effect Transistor, 9.1A I(D), 60V, 0.031ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252

Part Image SUD23N06-31 Vishay Intertechnologies

Power Field-Effect Transistor, 21.4A I(D), 60V, 0.031ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252