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AFGHL40T65RQDN - onsemi

Description: AEC Q101 qualified; Short circuit rated; Maximum Junction Temperature : TJ = 175℃; Positive Temperature Co-efficient for Easy Parallel Operating; Tighten Parameter Distribution; Low Saturation Voltage

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AFGHL40T65RQDN - onsemi  - 3D model
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AFGHL40T65RQDN Details

  • Manufacturer Part Number:

    AFGHL40T65RQDN

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    TO-247-3LD

  • Manufacturer Package Code:

    340CX

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    8 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    5.35

  • Case Connection:

    COLLECTOR

  • Collector Current-Max (IC):

    46 A

  • Collector-Emitter Voltage-Max:

    650 V

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • Gate-Emitter Thr Voltage-Max:

    6.05 V

  • Gate-Emitter Voltage-Max:

    20 V

  • JEDEC-95 Code:

    TO-247

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    288 W

  • Surface Mount:

    NO

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    POWER CONTROL

  • Transistor Element Material:

    SILICON

  • Turn-off Time-Nom (toff):

    149 ns

  • Turn-on Time-Nom (ton):

    74 ns

  • VCEsat-Max:

    1.82 V

AFGHL40T65RQDN Frequently Asked Questions (FAQs)

  • The recommended PCB footprint for the AFGHL40T65RQDN is a 5x6mm pad with a 1.5mm thermal pad in the center, as shown in the onsemi application note AND9093/D.
  • To ensure proper thermal management, use a heat sink with a thermal resistance of ≤ 1°C/W, and apply a thermal interface material (TIM) with a thermal conductivity of ≥ 1 W/m-K. Also, ensure good airflow around the device.
  • The maximum allowed voltage for the gate-source voltage (VGS) of the AFGHL40T65RQDN is ±20V, with a recommended operating range of -5V to +15V.
  • Yes, the AFGHL40T65RQDN is suitable for high-frequency switching applications up to 1MHz, but ensure proper PCB layout, decoupling, and snubber design to minimize ringing and EMI.
  • Use a voltage clamp or a zener diode to protect the device from overvoltage, and implement overcurrent protection using a current sense resistor and a comparator or a dedicated overcurrent protection IC.

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AFGHL40T65RQDN Overview

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