AFGHL Footprint, Symbol and 3D Model search results

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Image	Part Number	D.S	Description	Package Category	Prices / Stock	Model	Action
	AFGHL50T65SQDC onsemi	1	Maximum Junction Temperature, Tj=175°C; Automotive Qualified; Very low switching and conduction losses; Positive temperature co-efficient; 100% of the parts are dynamically tested; Copacked with SiC schottky barrier diode; Tight parameter distribution	Transistor Outline, Vertical	AFGHL50T65SQDC	3D model available Symbol and footprint available 3	1 Download Model
	AFGHL40T65SQD onsemi	1	AEC Q101 qualified; Maximum Junction Temperature, Tj=175°C; Very low switching and conduction losses; Positive temperature co-efficient; Tight parameter distribution; Fast Switching; Low Saturation Voltage: Vcesat=1.6V(Typ.)@Ic=75A; 100% of the parts are tested for ILM	Transistor Outline, Vertical	AFGHL40T65SQD	3D model available Symbol and footprint available 3	1 Download Model
	AFGHL40T120RW-STD onsemi	1	AEC Q101 qualified; Tight Parameter distribution; Low Vcesat; Low Eoff & Eon	Other	AFGHL40T120RW-STD	3D model available Symbol and footprint available 3	1 Download Model
	AFGHL25T120RWD onsemi	1	AEC Q101 qualified; Tight Parameter distribution; Low Vcesat; Low Eoff & Eon	Other	AFGHL25T120RWD	3D model available Symbol and footprint available 3	1 Download Model

	AFGHL40T120RWD onsemi	1	AEC Q101 qualified; Tight Parameter distribution; Low Vcesat; Low Eoff & Eon	Transistor Outline, Vertical	AFGHL40T120RWD	3D model available Symbol and footprint available 3	1 Download Model
	AFGHL40T65SPD onsemi	1	AEC-Q101 rev. D Qualified; 100% of the part are dynamically tested; Tight Parameter Distribution	Transistor Outline, Vertical	AFGHL40T65SPD	3D model available Symbol and footprint available 3	1 Download Model
	AFGHL40T120RW onsemi	1	AEC Q101 qualified; Tight Parameter distribution; Low Vcesat; Low Eoff & Eon	Other	AFGHL40T120RW	3D model available Symbol and footprint available 3	1 Download Model
	AFGHL50T65SQD onsemi	1	AEC Q101 qualified; Maximum Junction Temperature, Tj=175°C; Very low switching and conduction losses; Positive temperature co-efficient; Tight parameter distribution; Fast Switching; Low Saturation Voltage: Vcesat=1.6V(Typ.)@Ic=75A; 100% of the parts are tested for ILM	Transistor Outline, Vertical	AFGHL50T65SQD	3D model available Symbol and footprint available 3	1 Download Model
	AFGHL40T120RWD-STD onsemi	1	AEC Q101 qualified; Tight Parameter distribution; Low Vcesat; Low Eoff & Eon	Transistor Outline, Vertical	AFGHL40T120RWD-STD	3D model available Symbol and footprint available 3	1 Download Model
	AFGHL50T65RQDN onsemi	1	AEC Q101 qualified; Maximum Junction Temperature : TJ = 175℃; Positive Temperature Co-efficient for Easy Parallel Operating; Tighten Parameter Distribution; Low Saturation Voltage; Short circuit rated	Transistor Outline, Vertical	AFGHL50T65RQDN	3D model available Symbol and footprint available 3	1 Download Model
	AFGHL40T65SQ onsemi	1	AEC Q101 qualified; Maximum Junction Temperature, Tj=175°C; Very low switching and conduction losses; Positive temperature co-efficient; Tight parameter distribution; Fast Switching; Low Saturation Voltage: Vcesat=1.6V(Typ.)@Ic=75A; 100% of the parts are tested for ILM	Transistor Outline, Vertical	AFGHL40T65SQ	3D model available Symbol and footprint available 3	1 Download Model
	AFGHL25T120RW onsemi	1	AEC Q101 qualified; Tight Parameter distribution; Low Vcesat; Low Eoff & Eon	Other	AFGHL25T120RW	3D model available Symbol and footprint available 3	1 Download Model
	AFGHL25T120RHD onsemi	1	Insulated Gate Bipolar Transistor, 48A I(C), 1200V V(BR)CES, N-Channel, TO-247		AFGHL25T120RHD	3D model not available Symbol and footprint not available 0	0 Build or Request
	AFGHL40T120RL onsemi	1	Insulated Gate Bipolar Transistor, 48A I(C), 1280V V(BR)CES, N-Channel, TO-247		AFGHL40T120RL	3D model not available Symbol and footprint not available 0	0 Build or Request
	AFGHL40T120RH onsemi	1	Insulated Gate Bipolar Transistor		AFGHL40T120RH	3D model not available Symbol and footprint not available 0	0 Build or Request

	AFGHL40T65RQDN onsemi	1	AEC Q101 qualified; Short circuit rated; Maximum Junction Temperature : TJ = 175℃; Positive Temperature Co-efficient for Easy Parallel Operating; Tighten Parameter Distribution; Low Saturation Voltage		AFGHL40T65RQDN	3D model available Symbol and footprint not available 1	1 Download Model
	AFGHL25T120RLD onsemi	1	Insulated Gate Bipolar Transistor, 48A I(C), 1200V V(BR)CES, N-Channel, TO-247		AFGHL25T120RLD	3D model not available Symbol and footprint not available 0	0 Build or Request
	AFGHL40T120RHD onsemi	1	Insulated Gate Bipolar Transistor, 48A I(C), 1200V V(BR)CES, N-Channel, TO-247		AFGHL40T120RHD	3D model not available Symbol and footprint not available 0	0 Build or Request
	AFGHL25T120RL onsemi	1	Insulated Gate Bipolar Transistor		AFGHL25T120RL	3D model not available Symbol and footprint not available 0	0 Build or Request
	AFGHL25T120RH onsemi	1	Insulated Gate Bipolar Transistor		AFGHL25T120RH	3D model not available Symbol and footprint not available 0	0 Build or Request
	AFGHL75T65SQ onsemi	1	Fast switching IGBT; AEC-Q101 qualified; Tight parameter distribution and Positive temperature co-efficient		AFGHL75T65SQ	3D model available Symbol and footprint not available 1	1 Download Model
	AFGHL30T65RQDN onsemi	1	Insulated Gate Bipolar Transistor, 42A I(C), 650V V(BR)CES, N-Channel, TO-247		AFGHL30T65RQDN	3D model not available Symbol and footprint not available 0	0 Build or Request
	AFGHL75T65SQDT onsemi	1	Insulated Gate Bipolar Transistor, 80A I(C), 650V V(BR)CES, N-Channel, TO-247		AFGHL75T65SQDT	3D model not available Symbol and footprint not available 0	0 Build or Request
	AFGHL75T65SQD onsemi	1	Insulated Gate Bipolar Transistor, 80A I(C), 650V V(BR)CES, N-Channel, TO-247		AFGHL75T65SQD	3D model not available Symbol and footprint not available 0	0 Build or Request
	AFGHL75T65SQDC onsemi	1	SiC schottky co-pack diode; Fast switching IGBT; AEC-Q101 qualified; Tight parameter distribution and Positive temperature co-efficient		AFGHL75T65SQDC	3D model available Symbol and footprint not available 1	1 Download Model
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