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AFGHL75T65SQDC - onsemi

Description: SiC schottky co-pack diode; Fast switching IGBT; AEC-Q101 qualified; Tight parameter distribution and Positive temperature co-efficient

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AFGHL75T65SQDC Details

  • Manufacturer Part Number:

    AFGHL75T65SQDC

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    TO-247-3LD

  • Manufacturer Package Code:

    340CX

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    8 Weeks

  • Date Of Intro:

    2020-07-16

  • Manufacturer:

    onsemi

  • YTEOL:

    5

  • Additional Feature:

    LOW CONDUCTION LOSS

  • Collector Current-Max (IC):

    80 A

  • Collector-Emitter Voltage-Max:

    650 V

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • Gate-Emitter Thr Voltage-Max:

    6.4 V

  • Gate-Emitter Voltage-Max:

    20 V

  • JEDEC-95 Code:

    TO-247

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    375 W

  • Reference Standard:

    AEC-Q101

  • Surface Mount:

    NO

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    POWER CONTROL

  • Transistor Element Material:

    SILICON

  • Turn-off Time-Nom (toff):

    196.4 ns

  • Turn-on Time-Nom (ton):

    73.6 ns

  • VCEsat-Max:

    2.1 V

AFGHL75T65SQDC Frequently Asked Questions (FAQs)

  • The recommended gate resistor value is typically between 10 ohms to 20 ohms, depending on the specific application and switching frequency.
  • To ensure SOA, follow the guidelines in the datasheet for voltage and current limits, and consider using a gate driver with built-in SOA protection. Additionally, ensure proper thermal management and heat sinking.
  • The maximum allowed dv/dt for the AFGHL75T65SQDC is typically around 5-10 kV/μs, but this can vary depending on the specific application and operating conditions. Consult the datasheet and application notes for more information.
  • Yes, the AFGHL75T65SQDC can be used in a parallel configuration, but it's essential to ensure proper gate drive synchronization, current sharing, and thermal management to avoid uneven current distribution and thermal runaway.
  • The recommended storage temperature range for the AFGHL75T65SQDC is -40°C to 125°C, as specified in the datasheet.

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