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AFGHL40T65SPD - onsemi

Description: AEC-Q101 rev. D Qualified; 100% of the part are dynamically tested; Tight Parameter Distribution

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AFGHL40T65SPD - onsemi PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO-247-2L-
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AFGHL40T65SPD - onsemi  - 3D model - Transistor Outline, Vertical - TO-247-2L-
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AFGHL40T65SPD Details

  • Manufacturer Part Number:

    AFGHL40T65SPD

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    TO-247-3LD

  • Manufacturer Package Code:

    340CX

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    8 Weeks

  • Date Of Intro:

    2018-07-20

  • Manufacturer:

    onsemi

  • YTEOL:

    5.35

  • Additional Feature:

    LOW CONDUCTION LOSS

  • Collector Current-Max (IC):

    80 A

  • Collector-Emitter Voltage-Max:

    650 V

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • Gate-Emitter Thr Voltage-Max:

    20 V

  • Gate-Emitter Voltage-Max:

    7.5 V

  • JEDEC-95 Code:

    TO-247

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    267 W

  • Reference Standard:

    AEC-Q101

  • Surface Mount:

    NO

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    POWER CONTROL

  • Transistor Element Material:

    SILICON

  • Turn-off Time-Nom (toff):

    48 ns

  • Turn-on Time-Nom (ton):

    56 ns

  • VCEsat-Max:

    2.4 V

AFGHL40T65SPD Frequently Asked Questions (FAQs)

  • A good PCB layout should prioritize thermal dissipation, with a solid ground plane and thermal vias. A heat sink or thermal interface material can be used to improve heat dissipation. Consult onsemi's application notes for specific guidance.
  • Implement a robust thermal monitoring and protection scheme, including over-temperature protection (OTP) and over-current protection (OCP). Ensure proper thermal design, and consider using a thermistor or thermocouple for temperature monitoring.
  • Use proper PCB layout techniques, such as separating high-frequency and low-frequency circuits, and consider using EMI filters or shielding. Ensure that the device is properly decoupled, and follow onsemi's recommendations for EMI mitigation.
  • Optimize the gate drive circuit by selecting the right gate resistor value, ensuring proper gate-source voltage, and minimizing parasitic inductance. Consult onsemi's application notes for specific guidance on gate drive optimization.
  • Operating at high temperatures can reduce the device's lifespan. Ensure proper thermal design, and consider derating the device's power handling at high temperatures. Consult onsemi's reliability data and application notes for specific guidance.

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