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AFGHL75T65SQ - onsemi

Description: Fast switching IGBT; AEC-Q101 qualified; Tight parameter distribution and Positive temperature co-efficient

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AFGHL75T65SQ Details

  • Manufacturer Part Number:

    AFGHL75T65SQ

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    TO-247-3LD

  • Manufacturer Package Code:

    340CX

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    9 Weeks

  • Date Of Intro:

    2020-07-16

  • Manufacturer:

    onsemi

  • YTEOL:

    5

  • Additional Feature:

    LOW CONDUCTION LOSS

  • Collector Current-Max (IC):

    80 A

  • Collector-Emitter Voltage-Max:

    650 V

  • Configuration:

    SINGLE

  • Gate-Emitter Thr Voltage-Max:

    6.4 V

  • Gate-Emitter Voltage-Max:

    20 V

  • JEDEC-95 Code:

    TO-247

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    375 W

  • Reference Standard:

    AEC-Q101

  • Surface Mount:

    NO

  • Terminal Finish:

    MATTE TIN

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    POWER CONTROL

  • Transistor Element Material:

    SILICON

  • Turn-off Time-Nom (toff):

    187 ns

  • Turn-on Time-Nom (ton):

    70 ns

  • VCEsat-Max:

    2.1 V

AFGHL75T65SQ Frequently Asked Questions (FAQs)

  • The recommended gate resistor value is typically between 10Ω to 20Ω, depending on the specific application and switching frequency.
  • To ensure SOA, follow the guidelines in the datasheet for voltage and current limits, and consider using a gate driver with built-in SOA protection.
  • The maximum allowed dv/dt is typically around 5-10 kV/μs, but this can vary depending on the specific application and layout. Consult the datasheet and application notes for more information.
  • Yes, but it's crucial to ensure that the IGBTs are matched in terms of characteristics, and that the gate drive and layout are designed to minimize differences in switching times and voltage drops.
  • Use a suitable heat sink, ensure good thermal interface material, and consider forced air cooling or liquid cooling for high-power applications. Monitor junction temperature and adjust the cooling system accordingly.

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AFGHL75T65SQ Overview

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