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AIGW40N65H5XKSA1 - Infineon

Description: IGBT Transistors DISCRETES

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AIGW40N65H5XKSA1 - Infineon - PCB symbol
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PCB Footprints
AIGW40N65H5XKSA1 - Infineon PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - PG-247_3
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3D Models
AIGW40N65H5XKSA1 - Infineon - 3D model - Transistor Outline, Vertical - PG-247_3
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AIGW40N65H5XKSA1 Details

  • Manufacturer Part Number:

    AIGW40N65H5XKSA1

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    End Of Life

  • Country Of Origin:

    Germany, Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    10 Weeks

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    1

  • Case Connection:

    COLLECTOR

  • Collector Current-Max (IC):

    74 A

  • Collector-Emitter Voltage-Max:

    650 V

  • Configuration:

    SINGLE

  • Gate-Emitter Thr Voltage-Max:

    4.8 V

  • Gate-Emitter Voltage-Max:

    20 V

  • JEDEC-95 Code:

    TO-247

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -40 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    250 W

  • Reference Standard:

    AEC-Q101

  • Surface Mount:

    NO

  • Terminal Finish:

    Tin (Sn)

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    POWER CONTROL

  • Transistor Element Material:

    SILICON

  • Turn-off Time-Nom (toff):

    203 ns

  • Turn-on Time-Nom (ton):

    31 ns

  • VCEsat-Max:

    2.1 V

AIGW40N65H5XKSA1 Frequently Asked Questions (FAQs)

  • The maximum operating temperature of the AIGW40N65H5XKSA1 is 150°C, as specified in the datasheet. However, it's recommended to operate the device within a temperature range of 25°C to 125°C for optimal performance and reliability.
  • Proper thermal management of the AIGW40N65H5XKSA1 involves ensuring good heat dissipation from the device. This can be achieved by using a heat sink with a thermal interface material, ensuring good airflow around the device, and avoiding thermal hotspots. The datasheet provides guidelines for thermal resistance and maximum allowable temperature rise.
  • The recommended gate resistor value for the AIGW40N65H5XKSA1 is typically in the range of 10 ohms to 20 ohms. However, the optimal value depends on the specific application, switching frequency, and gate driver characteristics. It's recommended to consult the datasheet and application notes for more information.
  • Yes, the AIGW40N65H5XKSA1 can be used in a parallel configuration to increase the current handling capability. However, it's essential to ensure that the devices are properly matched, and the gate drive signals are synchronized to avoid uneven current sharing and potential oscillations.
  • The maximum allowable voltage transient for the AIGW40N65H5XKSA1 is typically specified as 650 V, but it's recommended to consult the datasheet and application notes for more information on voltage transient tolerance and protection measures.

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AIGW40N65H5XKSA1 Overview

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