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BSD214SNL6327 - Infineon

Description: N-Channel 20 V 1.5A (Ta) 500mW (Ta) Surface Mount PG-SOT363-6-6 , 140mOhm , -55°C ~ 150°C (TJ)

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PCB Footprints
BSD214SNL6327 - Infineon PCB footprint - Other - Other - PG-SOT363
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BSD214SNL6327 - Infineon  - 3D model - Other - PG-SOT363
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BSD214SNL6327 Details

  • Manufacturer Part Number:

    BSD214SNL6327

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Package Description:

    GREEN, PLASTIC PACKAGE-6

  • Pin Count:

    6

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    4 Weeks

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    0

  • Additional Feature:

    AVALANCHE RATED, LOGIC LEVEL COMPATIBLE

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    20 V

  • Drain Current-Max (ID):

    1.5 A

  • Drain-source On Resistance-Max:

    0.14 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    9 pF

  • JESD-30 Code:

    R-PDSO-G6

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    6

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    0.5 W

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    MATTE TIN

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Transistor Element Material:

    SILICON

BSD214SNL6327 Frequently Asked Questions (FAQs)

  • Infineon provides a recommended PCB layout in their application note AN2013-03, which includes guidelines for thermal vias, copper thickness, and component placement to ensure optimal thermal performance.
  • Infineon recommends following the guidelines in their application note AN2013-04, which provides information on PCB design, component selection, and layout considerations to ensure EMC compliance.
  • According to Infineon's technical support, the device can withstand a maximum voltage stress of 1.5 times the maximum rated voltage during startup or shutdown, but this should be limited to a duration of less than 100 ms to prevent damage.
  • While the device is rated for operation up to 150°C, Infineon recommends derating the device's performance and ensuring proper cooling to prevent thermal runaway. Consult with Infineon's technical support for specific guidance on high-temperature applications.
  • Infineon provides a troubleshooting guide in their application note AN2013-05, which covers common issues with overcurrent protection, overvoltage protection, and thermal shutdown, as well as recommended debugging techniques.

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BSD214SNL6327 Overview

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Part Image BSD214SN Infineon Technologies AG

Small Signal Field-Effect Transistor, 1.5A I(D), 20V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET