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BSM100GAL120DLCK - Infineon

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BSM100GAL120DLCK Details

  • Manufacturer Part Number:

    BSM100GAL120DLCK

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Part Package Code:

    MODULE

  • Pin Count:

    5

  • ECCN Code:

    EAR99

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    0

  • Case Connection:

    ISOLATED

  • Collector Current-Max (IC):

    205 A

  • Collector-Emitter Voltage-Max:

    1200 V

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • Gate-Emitter Voltage-Max:

    20 V

  • JESD-30 Code:

    R-XUFM-X5

  • Number of Elements:

    1

  • Number of Terminals:

    5

  • Operating Temperature-Max:

    175 °C

  • Package Body Material:

    UNSPECIFIED

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Peak Reflow Temperature (Cel):

    NOT SPECIFIED

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    830 W

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Form:

    UNSPECIFIED

  • Terminal Position:

    UPPER

  • Time@Peak Reflow Temperature-Max (s):

    NOT SPECIFIED

  • Transistor Application:

    POWER CONTROL

  • Transistor Element Material:

    SILICON

  • Turn-off Time-Nom (toff):

    480 ns

  • Turn-on Time-Nom (ton):

    110 ns

  • VCEsat-Max:

    2.6 V

BSM100GAL120DLCK Frequently Asked Questions (FAQs)

  • The maximum operating temperature of the BSM100GAL120DLCK is 150°C (TJ).
  • The BSM100GAL120DLCK is not designed for high-humidity environments. It's recommended to use it in a controlled environment with a relative humidity of 60% or less.
  • Infineon provides a recommended PCB layout in the application note AN2015-03, which includes guidelines for thermal management, and signal integrity.
  • Yes, the BSM100GAL120DLCK can be used in a parallel configuration, but it's essential to ensure that the modules are properly synchronized and that the current sharing is balanced.
  • The maximum allowed voltage deviation for the BSM100GAL120DLCK is ±10% of the nominal voltage.

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BSM100GAL120DLCK Overview

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Part Image BSM100GAL120DLCKHOSA1 Infineon Technologies AG

Insulated Gate Bipolar Transistor, 205A I(C), 1200V V(BR)CES, N-Channel