Part Image

BSM100GB120DN2K - Infineon

Description: INSULATED GATE BIPOLAR TRANSISTO

Download BSM100GB120DN2K Model
Schematic
symbols
Schematic symbol is unavailable for download
PCB
footprints
PCB footprint is unavailable for download
3D
models
3D model is unavailable for download
3D Models
BSM100GB120DN2K - Infineon  - 3D model
click to zoom
Note! To download footprints and symbols, use the build and request forms below

Build

Launch Build Wizard
Build Wizard not available for this package category!

Request (48 hours)

BSM100GB120DN2K Details

  • Manufacturer Part Number:

    BSM100GB120DN2K

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Part Package Code:

    MODULE

  • Pin Count:

    7

  • ECCN Code:

    EAR99

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    0

  • Collector Current-Max (IC):

    145 A

  • Collector-Emitter Voltage-Max:

    1200 V

  • Gate-Emitter Voltage-Max:

    20 V

  • Number of Elements:

    1

  • Operating Temperature-Max:

    150 °C

  • Power Dissipation-Max (Abs):

    700 W

  • VCEsat-Max:

    3.2 V

BSM100GB120DN2K Frequently Asked Questions (FAQs)

  • The maximum operating temperature of the BSM100GB120DN2K is 150°C, as specified in the datasheet. However, it's recommended to operate the module at a maximum temperature of 125°C for optimal performance and reliability.
  • Proper thermal management is crucial for the reliability and performance of the IGBT module. Ensure good thermal contact between the module and the heat sink, use a suitable thermal interface material, and design a heat sink with adequate thermal capacity to keep the module temperature within the recommended range.
  • The recommended gate resistance for the BSM100GB120DN2K is between 10 ohms and 20 ohms. This value ensures proper switching performance and minimizes electromagnetic interference (EMI).
  • Yes, the BSM100GB120DN2K can be used in a parallel configuration to increase the current handling capability. However, it's essential to ensure that the modules are properly matched, and the gate drives are synchronized to prevent uneven current sharing and potential oscillations.
  • The recommended dead time for the BSM100GB120DN2K is between 1 us and 3 us, depending on the specific application and switching frequency. A longer dead time can help prevent cross-conduction and reduce EMI, but may also increase switching losses.

Trust Checks

No trust score is available for this model.
Trust Score Unavailable
Sponsored

BSM100GB120DN2K Overview

Use the download button to access the BSM100GB120DN2K 3D model. You can still request or build the schematic symbol and PCB footprint by using the respective build or request forms on this page.
To find more CAD model downloads similar to this part, try a partial part number search, like BSM10, or try a keyword search, such as IGBTs

Parts related to BSM100GB120DN2K

Showing 0 results

Select Package Category

Package Categories

Datasheet PDF Preview