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BSS84LT1G - onsemi

Description: Miniature SOT-23 Surface Mount Package Saves Board Space

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PCB Footprints
BSS84LT1G - onsemi PCB footprint - SOT23 (3-Pin) - SOT23 (3-Pin) - SOT-23 (TO-236) CASE 318-08
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3D Models
BSS84LT1G - onsemi  - 3D model - SOT23 (3-Pin) - SOT-23 (TO-236) CASE 318-08
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BSS84LT1G Details

  • Manufacturer Part Number:

    BSS84LT1G

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    SOT-23 (TO-236) 3 LEAD

  • Package Description:

    ROHS COMPLIANT, MINIATURE, CASE 318-08, 3 PIN

  • Pin Count:

    3

  • Manufacturer Package Code:

    318

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Manufacturer:

    onsemi

  • YTEOL:

    6.5

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    50 V

  • Drain Current-Max (ID):

    0.13 A

  • Drain-source On Resistance-Max:

    10 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-236

  • JESD-30 Code:

    R-PDSO-G3

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    P-CHANNEL

  • Power Dissipation-Max (Abs):

    0.225 W

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

BSS84LT1G Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for the BSS84LT1G is -40°C to 150°C.
  • To ensure proper biasing, the BSS84LT1G requires a minimum gate-source voltage (VGS) of 2.5V and a maximum drain-source voltage (VDS) of 12V. Additionally, the gate current (IG) should be limited to 10mA.
  • The maximum continuous drain current (ID) for the BSS84LT1G is 1.5A, and the maximum pulsed drain current is 3A.
  • To protect the BSS84LT1G from ESD, handle the device by the body or use an anti-static wrist strap, and ensure the PCB is designed with ESD protection in mind, such as using ESD diodes or resistors.
  • For optimal performance, the PCB layout should minimize parasitic inductance and capacitance. Use a ground plane, keep the drain and source pins as close as possible, and use a low-inductance path for the gate signal.

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BSS84LT1G Overview

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Part Image BSS84/DG NXP Semiconductors

Small Signal Field-Effect Transistor, 0.13A I(D), 50V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB

Part Image BSS84 Zetex / Diodes Inc

Small Signal Field-Effect Transistor, 0.13A I(D), 50V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET

Part Image BSS84 National Semiconductor Corporation

Small Signal Field-Effect Transistor, 0.13A I(D), 50V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB

Part Image BSS84TRL NXP Semiconductors

Small Signal Field-Effect Transistor, 0.13A I(D), 50V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET

Part Image BSS84/T1 NXP Semiconductors

130mA, 50V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB, PLASTIC PACKAGE-3

For a full list of alternate parts for BSS84LT1G, check out Findchips.com