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CSD17483F4 - Texas Instruments

Description: Texas Instruments CSD17483F4 N-channel MOSFET Transistor, 1.5 A, 30 V, 3-Pin PICOSTAR

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CSD17483F4 - Texas Instruments PCB footprint - Other - Other - YJC_PICOSTAR
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CSD17483F4 Details

  • Manufacturer Part Number:

    CSD17483F4

  • Brand Name:

    Texas Instruments

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Country Of Origin:

    Mainland China, Philippines

  • ECCN Code:

    EAR99

  • HTS Code:

    8541.21.00.95

  • Manufacturer:

    Texas Instruments

  • YTEOL:

    15

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE AND RESISTOR

  • DS Breakdown Voltage-Min:

    30 V

  • Drain Current-Max (ID):

    1.5 A

  • Drain-source On Resistance-Max:

    0.55 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    3 pF

  • JESD-30 Code:

    R-XBCC-N3

  • JESD-609 Code:

    e4

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    UNSPECIFIED

  • Package Shape:

    RECTANGULAR

  • Package Style:

    CHIP CARRIER

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    0.5 W

  • Pulsed Drain Current-Max (IDM):

    5 A

  • Surface Mount:

    YES

  • Terminal Finish:

    Nickel/Gold (Ni/Au)

  • Terminal Form:

    NO LEAD

  • Terminal Position:

    BOTTOM

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

CSD17483F4 Frequently Asked Questions (FAQs)

  • The maximum SOA for the CSD17483F4 is not explicitly stated in the datasheet. However, TI recommends following the SOA curves provided in the application note 'NexFET Power MOSFET Safe Operating Area' (SLUA623) to ensure reliable operation.
  • To optimize the gate drive circuit, consider the following: use a low-impedance gate drive, minimize the gate resistance, and ensure the gate voltage is within the recommended range (4.5V to 15V). Additionally, consider using a gate driver IC, such as the UCC37322, to improve switching performance.
  • For optimal performance, follow these PCB layout guidelines: keep the drain and source pins as close as possible, use a solid ground plane, and minimize the length of the drain and source traces. Also, consider using a thermal pad and vias to improve heat dissipation.
  • To ensure reliable operation, consider the following thermal management strategies: use a heat sink with a thermal interface material, ensure good airflow, and avoid overheating by monitoring the junction temperature (TJ). The maximum TJ for the CSD17483F4 is 150°C.
  • The CSD17483F4 has an integrated ESD protection diode, but it's still recommended to follow proper ESD handling procedures during assembly and testing. Use an ESD wrist strap or mat, and ensure the device is stored in an ESD-protective package.

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About Texas Instruments

Texas Instruments (TI) designs and manufactures semiconductors and integrated circuits for a wide range of applications. The company's product portfolio includes analog chips, which are essential for managing power and signal functions in electronic devices, and embedded processors, which serve as the brains in various systems, enabling functionality in everything from industrial equipment to consumer electronics. TI's innovations in semiconductor technology have made it a leader in the industry.

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Small Signal Field-Effect Transistor, 1.5A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

Part Image CSD17483F4R Texas Instruments

Small Signal Field-Effect Transistor, 1.5A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET