Part Image

CSD19532KTT - Texas Instruments

Description: 100V, N ch NexFET MOSFET™, single D2PAK, 5.6mOhm

Download CSD19532KTT Model
Schematic
symbols
Schematic symbol is unavailable for download
PCB
footprints
PCB footprint is unavailable for download
3D
models
3D model is unavailable for download
PCB Footprints
CSD19532KTT - Texas Instruments PCB footprint - Other - Other - KTT-(R-PSFM-G3)
click to zoom
3D Models
CSD19532KTT - Texas Instruments  - 3D model - Other - KTT-(R-PSFM-G3)
click to zoom

CSD19532KTT Details

  • Manufacturer Part Number:

    CSD19532KTT

  • Brand Name:

    Texas Instruments

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • ECCN Code:

    EAR99

  • HTS Code:

    8541.29.00.95

  • Manufacturer:

    Texas Instruments

  • YTEOL:

    15

  • Additional Feature:

    AVALANCHE RATED

  • Avalanche Energy Rating (Eas):

    259 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE

  • DS Breakdown Voltage-Min:

    100 V

  • Drain Current-Max (ID):

    200 A

  • Drain-source On Resistance-Max:

    0.0066 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    18 pF

  • JEDEC-95 Code:

    TO-263AB

  • JESD-30 Code:

    R-PSSO-G2

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    2

  • Number of Elements:

    1

  • Number of Terminals:

    2

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Pulsed Drain Current-Max (IDM):

    400 A

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn)

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

CSD19532KTT Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for the CSD19532KTT is -40°C to 150°C.
  • To ensure proper biasing, connect the gate-source voltage (Vgs) to a voltage source that is within the recommended range (typically 4.5V to 10V) and ensure the drain-source voltage (Vds) is within the recommended range (typically 10V to 30V).
  • For optimal thermal performance, use a multi-layer PCB with a thermal pad connected to a heat sink or a thermal interface material. Ensure good thermal conductivity and minimize thermal resistance.
  • Use a voltage regulator or a voltage limiter to prevent overvoltage conditions. Implement overcurrent protection using a current sense resistor and a comparator or a dedicated overcurrent protection IC.
  • Use a gate drive circuit with a high-current capability (e.g., TC4420 or UCC37322) and ensure the gate drive voltage is within the recommended range (typically 10V to 15V).

Trust Checks

This model has been provided by an expert contributor.
Expert Contribution
This model has been verified by system checks.
System Verified
This model has been reviewed by community users.
Community Approved
Sponsored

CSD19532KTT Overview

Use the download button to access the CSD19532KTT schematic symbol, PCB footprint, and 3D model.
To find more CAD model downloads similar to this part, try a partial part number search, like CSD19, or try a keyword search, such as Power Field-Effect Transistors

About Texas Instruments

Texas Instruments (TI) designs and manufactures semiconductors and integrated circuits for a wide range of applications. The company's product portfolio includes analog chips, which are essential for managing power and signal functions in electronic devices, and embedded processors, which serve as the brains in various systems, enabling functionality in everything from industrial equipment to consumer electronics. TI's innovations in semiconductor technology have made it a leader in the industry.

Parts related to CSD19532KTT

Showing 0 results

CSD19532KTT Alternates

Showing results

Image Part Number Model
Part Image CSD19532KTTT Texas Instruments

Power Field-Effect Transistor, 200A I(D), 100V, 0.0066ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB

Part Image SSF1006A Suzhou Good-Ark Electronics Co Ltd

Power Field-Effect Transistor, 200A I(D), 100V, 0.0055ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, D2PAK-3/2