Part Image

CSD19532KTTT - Texas Instruments

Description: 100V, N ch NexFET MOSFET™, single D2PAK, 5.6mOhm

Download CSD19532KTTT Model
Schematic
symbols
Schematic symbol is unavailable for download
PCB
footprints
PCB footprint is unavailable for download
3D
models
3D model is unavailable for download
PCB Footprints
CSD19532KTTT - Texas Instruments PCB footprint - Other - Other - KTT-(R-PSFM-G3)
click to zoom
3D Models
CSD19532KTTT - Texas Instruments  - 3D model - Other - KTT-(R-PSFM-G3)
click to zoom

CSD19532KTTT Details

  • Manufacturer Part Number:

    CSD19532KTTT

  • Brand Name:

    Texas Instruments

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • ECCN Code:

    EAR99

  • HTS Code:

    8541.29.00.95

  • Manufacturer:

    Texas Instruments

  • YTEOL:

    15

  • Additional Feature:

    AVALANCHE RATED

  • Avalanche Energy Rating (Eas):

    259 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE

  • DS Breakdown Voltage-Min:

    100 V

  • Drain Current-Max (ID):

    200 A

  • Drain-source On Resistance-Max:

    0.0066 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    18 pF

  • JEDEC-95 Code:

    TO-263AB

  • JESD-30 Code:

    R-PSSO-G2

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    2

  • Number of Elements:

    1

  • Number of Terminals:

    2

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Pulsed Drain Current-Max (IDM):

    400 A

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn)

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

CSD19532KTTT Frequently Asked Questions (FAQs)

  • A 2-layer or 4-layer PCB with a solid ground plane and thermal vias is recommended. Ensure a minimum of 2 oz copper thickness and a thermal relief pattern under the device.
  • Ensure the input voltage (VIN) is within the recommended range (4.5V to 60V). Use a high-quality, low-ESR capacitor (e.g., X5R or X7R) for decoupling, and follow the recommended pin connections and layout guidelines.
  • The maximum allowed current is 30A, but it's recommended to derate the current based on the ambient temperature and PCB thermal design. Refer to the thermal derating curve in the datasheet.
  • Use a TVS diode or a zener diode for overvoltage protection. Implement overcurrent protection using a fuse or a current-sensing resistor with a comparator or a dedicated overcurrent protection IC.
  • The recommended operating frequency range is up to 1 MHz, but it can be used at higher frequencies with proper PCB design and layout considerations.

Trust Checks

This model has been provided by an expert contributor.
Expert Contribution
This model has been verified by system checks.
System Verified
This model has been reviewed by community users.
Community Approved
Sponsored

CSD19532KTTT Overview

Use the download button to access the CSD19532KTTT schematic symbol, PCB footprint, and 3D model.
To find more CAD model downloads similar to this part, try a partial part number search, like CSD19, or try a keyword search, such as Power Field-Effect Transistors

About Texas Instruments

Texas Instruments (TI) designs and manufactures semiconductors and integrated circuits for a wide range of applications. The company's product portfolio includes analog chips, which are essential for managing power and signal functions in electronic devices, and embedded processors, which serve as the brains in various systems, enabling functionality in everything from industrial equipment to consumer electronics. TI's innovations in semiconductor technology have made it a leader in the industry.

Parts related to CSD19532KTTT

Showing 0 results

CSD19532KTTT Alternates

Showing results

Image Part Number Model
Part Image CSD19532KTT Texas Instruments

Power Field-Effect Transistor, 200A I(D), 100V, 0.0066ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB

Part Image SSF1006A Suzhou Good-Ark Electronics Co Ltd

Power Field-Effect Transistor, 200A I(D), 100V, 0.0055ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, D2PAK-3/2