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CSD85301Q2 - Texas Instruments

Description: MOSFET 2N-CH 20V 5A 6WSON

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CSD85301Q2 - Texas Instruments PCB footprint - Other - Other - CSD85301Q2-3
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CSD85301Q2 Details

  • Manufacturer Part Number:

    CSD85301Q2

  • Brand Name:

    Texas Instruments

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • ECCN Code:

    EAR99

  • HTS Code:

    8541.29.00.95

  • Manufacturer:

    Texas Instruments

  • YTEOL:

    15

  • Additional Feature:

    AVALANCHE RATED

  • Avalanche Energy Rating (Eas):

    3.8 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    20 V

  • Drain Current-Max (ID):

    5 A

  • Drain-source On Resistance-Max:

    0.039 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    62 pF

  • JESD-30 Code:

    S-PDSO-N6

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    2

  • Number of Terminals:

    6

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    SQUARE

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Pulsed Drain Current-Max (IDM):

    26 A

  • Surface Mount:

    YES

  • Terminal Finish:

    Nickel/Palladium/Gold (Ni/Pd/Au)

  • Terminal Form:

    NO LEAD

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

CSD85301Q2 Frequently Asked Questions (FAQs)

  • A good PCB layout for the CSD85301Q2 involves keeping the high-current paths short and wide, using multiple vias to connect the thermal pad to a heat sink or a copper plane, and placing the input capacitors close to the device. Additionally, a solid ground plane and a separate power plane can help reduce EMI.
  • To optimize the performance of the CSD85301Q2 in a high-temperature environment, ensure good thermal conductivity by using a heat sink or a thermal interface material, and consider using a thermally enhanced package. Also, reduce the power dissipation by optimizing the input voltage and current, and consider using a lower power mode if possible.
  • When selecting input capacitors for the CSD85301Q2, consider the voltage rating, capacitance value, and equivalent series resistance (ESR). Choose capacitors with a voltage rating higher than the maximum input voltage, and a capacitance value that meets the recommended range. Also, select capacitors with low ESR to minimize power losses.
  • To troubleshoot issues with the CSD85301Q2, start by checking the input voltage and current, and ensure that the device is properly soldered and connected. Use an oscilloscope to monitor the output voltage and current, and check for any signs of oscillation or instability. Also, verify that the thermal design is adequate and that the device is not overheating.
  • Operating the CSD85301Q2 at a lower input voltage than recommended may result in reduced output voltage, reduced efficiency, and increased power losses. It may also affect the device's ability to regulate the output voltage and maintain stability. Always ensure that the input voltage meets the recommended minimum value to ensure optimal performance.

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CSD85301Q2 Overview

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About Texas Instruments

Texas Instruments (TI) designs and manufactures semiconductors and integrated circuits for a wide range of applications. The company's product portfolio includes analog chips, which are essential for managing power and signal functions in electronic devices, and embedded processors, which serve as the brains in various systems, enabling functionality in everything from industrial equipment to consumer electronics. TI's innovations in semiconductor technology have made it a leader in the industry.

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Part Image CSD85301Q2T Texas Instruments

Power Field-Effect Transistor, 5A I(D), 20V, 0.039ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET