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DMN3190LDW-7 - Diodes Incorporated

Description: MOSFET Dual N-Ch 30V 1A Enhanc. SOT363 Diodes Inc DMN3190LDW-7 Dual N-channel MOSFET Transistor, 1.3 A, 30 V, 6-Pin SOT-363

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DMN3190LDW-7 - Diodes Incorporated PCB footprint - SOT23 (6-Pin) - SOT23 (6-Pin) - DMN3190LDW-7-
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DMN3190LDW-7 - Diodes Incorporated  - 3D model - SOT23 (6-Pin) - DMN3190LDW-7-
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DMN3190LDW-7 Details

  • Manufacturer Part Number:

    DMN3190LDW-7

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Package Description:

    GREEN, PLASTIC PACKAGE-6

  • Pin Count:

    6

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    12 Weeks

  • Manufacturer:

    Diodes Incorporated

  • YTEOL:

    7

  • Additional Feature:

    HIGH RELIABILITY

  • Configuration:

    SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    30 V

  • Drain Current-Max (ID):

    1 A

  • Drain-source On Resistance-Max:

    0.19 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JESD-30 Code:

    R-PDSO-G6

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    2

  • Number of Terminals:

    6

  • Operating Mode:

    ENHANCEMENT MODE

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Reference Standard:

    AEC-Q101

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn)

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

DMN3190LDW-7 Frequently Asked Questions (FAQs)

  • The recommended PCB footprint for the DMN3190LDW-7 is a standard SOT23-6 package with a 1.5mm x 1.5mm body size. The recommended land pattern is available in the Diodes Incorporated's package outline drawing.
  • To ensure the DMN3190LDW-7 is properly biased, follow the recommended operating conditions and biasing circuitry shown in the datasheet. Additionally, ensure the input voltage is within the recommended range of 2.5V to 5.5V, and the output is properly terminated.
  • The maximum power dissipation of the DMN3190LDW-7 is 250mW. However, the actual power dissipation will depend on the operating conditions, such as input voltage, output current, and ambient temperature.
  • The DMN3190LDW-7 is a general-purpose N-channel MOSFET, and its frequency response is limited to around 100kHz. For high-frequency applications, a more specialized MOSFET with a higher frequency response may be required.
  • To protect the DMN3190LDW-7 from ESD, follow proper handling and storage procedures, such as using anti-static wrist straps, mats, and bags. Additionally, ensure the device is properly grounded during assembly and testing.

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DMN3190LDW-7 Overview

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