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FCPF250N65S3L1 - onsemi

Description: Obsolete - Power MOSFET, N-Channel, SUPERFET III, Easy Drive, 650 V, 12 A, 250 mΩ, TO-220F

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FCPF250N65S3L1 - onsemi - PCB symbol
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PCB Footprints
FCPF250N65S3L1 - onsemi PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO-220F
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3D Models
FCPF250N65S3L1 - onsemi - 3D model - Transistor Outline, Vertical - TO-220F
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FCPF250N65S3L1 Details

  • Manufacturer Part Number:

    FCPF250N65S3L1

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Part Package Code:

    TO-220-3 FullPak

  • Package Description:

    TO-220F, 3 PIN

  • Manufacturer Package Code:

    340BF

  • ECCN Code:

    EAR99

  • Date Of Intro:

    2017-06-09

  • Manufacturer:

    onsemi

  • YTEOL:

    0

  • Avalanche Energy Rating (Eas):

    57 mJ

  • Case Connection:

    ISOLATED

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    650 V

  • Drain Current-Max (ID):

    12 A

  • Drain-source On Resistance-Max:

    0.25 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-220AB

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    31 W

  • Pulsed Drain Current-Max (IDM):

    30 A

  • Surface Mount:

    NO

  • Terminal Finish:

    MATTE TIN

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

FCPF250N65S3L1 Frequently Asked Questions (FAQs)

  • The maximum junction temperature for the FCPF250N65S3L1 is 150°C, as specified in the datasheet. However, it's recommended to keep the junction temperature below 125°C for optimal performance and reliability.
  • To ensure proper cooling, it's essential to provide a good thermal path from the device to a heat sink or a heat spreader. Use a thermal interface material (TIM) with a thermal conductivity of at least 1 W/m-K, and ensure the heat sink is designed for the maximum power dissipation of the device.
  • The recommended gate drive voltage for the FCPF250N65S3L1 is between 10V and 15V. This ensures proper switching and minimizes the risk of false turn-on or oscillations.
  • Yes, the FCPF250N65S3L1 can be used in a parallel configuration to increase the current handling capability. However, it's essential to ensure that the devices are properly matched and that the gate drive signals are synchronized to prevent uneven current sharing.
  • For optimal performance and minimal parasitic inductance, it's recommended to use a 2-layer or 4-layer PCB with a solid ground plane and a separate power plane. Keep the high-frequency loops as small as possible, and use a Kelvin connection for the gate drive signal.

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FCPF250N65S3L1 Overview

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