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FDB8832 - onsemi

Description: Obsolete - N-Channel Logic Level PowerTrench MOSFET, 30V, 80A, 2.1mΩ

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PCB Footprints
FDB8832 - onsemi PCB footprint - Other - Other - TO-263AB_H=4.82mm
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3D Models
FDB8832 - onsemi  - 3D model - Other - TO-263AB_H=4.82mm
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FDB8832 Details

  • Manufacturer Part Number:

    FDB8832

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Part Package Code:

    D2PAK-3 / TO-263-2

  • Package Description:

    ROHS COMPLIANT PACKAGE-3

  • Manufacturer Package Code:

    418AJ

  • ECCN Code:

    EAR99

  • Manufacturer:

    onsemi

  • YTEOL:

    0

  • Avalanche Energy Rating (Eas):

    1246 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    30 V

  • Drain Current-Max (ID):

    34 A

  • Drain-source On Resistance-Max:

    0.0022 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-263AB

  • JESD-30 Code:

    R-PSSO-G2

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    2

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    245

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    300 W

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

FDB8832 Frequently Asked Questions (FAQs)

  • The maximum power dissipation of the FDB8832 is 1.4W, but it can be limited by the thermal resistance of the package and the PCB design.
  • To minimize EMI, keep the high-frequency traces short and away from the edges of the PCB, use a solid ground plane, and decouple the power supply with capacitors.
  • The recommended operating voltage range for the FDB8832 is 2.5V to 5.5V, but it can operate down to 2.3V with reduced performance.
  • Ensure the FDB8832 is properly biased by connecting the VCC pin to a stable voltage source, and the GND pin to a solid ground plane, and using a suitable bypass capacitor.
  • The maximum frequency of operation for the FDB8832 is 100MHz, but it can be limited by the specific application and PCB design.

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FDB8832 Overview

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Part Image FDB8832 Fairchild Semiconductor Corporation

Power Field-Effect Transistor, 34A I(D), 30V, 0.0022ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB

Part Image FDB8832_F085 onsemi

30V, 80A, 1.5mΩ, D2PAK, Logic Level N-Channel PowerTrench®, TO-263 2L (D2PAK), 800-TAPE REEL

Part Image FDB8832-F085 onsemi

N-Channel Logic Level PowerTrench® MOSFET, 30V, 80A, 2.1mΩ, TO-263 2L (D2PAK), 800-REEL, Automotive Qualified