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FDC6401N - onsemi

Description: Low gate charge ; RDS(ON) = 70 mΩ @ VGS = 4.5 V ; 3.0 A, 20 V ; High power and current handling capability ; High performance trench technology for extremelylow RDS(on) ; RDS(ON) = 95 mΩ @ VGS = 2.5 V

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FDC6401N - onsemi - PCB symbol
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PCB Footprints
FDC6401N - onsemi PCB footprint - SOT23 (6-Pin) - SOT23 (6-Pin) - SuperSOT-6
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3D Models
FDC6401N - onsemi - 3D model - SOT23 (6-Pin) - SuperSOT-6
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FDC6401N Details

  • Manufacturer Part Number:

    FDC6401N

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    TSOT-23-6

  • Package Description:

    SUPERSOT-6

  • Manufacturer Package Code:

    419BL

  • Country Of Origin:

    Philippines

  • ECCN Code:

    EAR99

  • Manufacturer:

    onsemi

  • YTEOL:

    6.95

  • Configuration:

    SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    20 V

  • Drain Current-Max (ID):

    3 A

  • Drain-source On Resistance-Max:

    0.07 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JESD-30 Code:

    R-PDSO-G6

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    2

  • Number of Terminals:

    6

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    0.7 W

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

FDC6401N Frequently Asked Questions (FAQs)

  • A good PCB layout for the FDC6401N involves keeping the input and output traces separate, using a solid ground plane, and placing the device close to the power source. Additionally, using a shielded inductor and placing a capacitor between the input and output pins can help reduce EMI.
  • To ensure the FDC6401N operates within its SOA, monitor the device's junction temperature, input voltage, and output current. Use thermal design and layout techniques to keep the junction temperature below 150°C. Also, ensure the input voltage is within the recommended range of 2.7V to 5.5V, and the output current does not exceed 1A.
  • The recommended input capacitor value for the FDC6401N is 1uF to 10uF, with a voltage rating of 6.3V or higher. A larger capacitor value can help reduce input voltage ripple, but may increase the startup time.
  • The FDC6401N is rated for operation up to 125°C, but its performance may degrade at high temperatures. If you need to operate the device in a high-temperature environment, ensure you provide adequate heat sinking and consider using a thermal interface material to improve heat transfer.
  • To troubleshoot issues with the FDC6401N, start by checking the input voltage, output voltage, and output current. Verify that the device is properly connected and that the input capacitor is properly sized. Use an oscilloscope to check for voltage ripple, noise, or oscillations. If the issue persists, consult the datasheet and application notes for guidance.

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FDC6401N Overview

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