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FDG6301N-F085 - onsemi

Description: Dual N-Channel Digital FET 25 V, 0.22 A, 4 Ω

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FDG6301N-F085 Details

  • Manufacturer Part Number:

    FDG6301N-F085

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Part Package Code:

    SC70 6L

  • Package Description:

    SC-70, 6 PIN

  • Manufacturer Package Code:

    419AD

  • Reach Compliance Code:

    Compliant

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    4 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    0

  • Additional Feature:

    LOGIC LEVEL COMPATIBLE

  • Configuration:

    SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    25 V

  • Drain Current-Max (ID):

    0.22 A

  • Drain-source On Resistance-Max:

    4 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JESD-30 Code:

    R-PDSO-G6

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    2

  • Number of Terminals:

    6

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    0.3 W

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

FDG6301N-F085 Frequently Asked Questions (FAQs)

  • The maximum junction temperature for the FDG6301N-F085 is 150°C. However, it's recommended to operate the device within a temperature range of -40°C to 125°C for optimal performance and reliability.
  • To ensure proper biasing, follow the recommended operating conditions outlined in the datasheet. Typically, this involves connecting the gate to a voltage source through a resistor, and ensuring the drain-source voltage is within the recommended range.
  • For optimal thermal performance, use a multi-layer PCB with a thermal relief pattern under the device. Ensure good thermal conductivity by using a thermal interface material (TIM) and a heat sink if necessary. Follow the recommended land pattern and keep the device away from heat sources.
  • Handle the device by the body or use an anti-static wrist strap to prevent ESD damage. Use ESD-protected workstations and follow proper handling procedures to minimize the risk of ESD damage.
  • Follow the recommended soldering profile outlined in the datasheet. Typically, this involves a peak temperature of 260°C for a maximum of 10 seconds, with a ramp-up and ramp-down rate of 3°C/s.

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FDG6301N-F085 Overview

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Part Image FDG6301N_NL Fairchild Semiconductor Corporation

Small Signal Field-Effect Transistor, 0.22A I(D), 25V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET