SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE
DS Breakdown Voltage-Min:
30 V
Drain Current-Max (ID):
29 A
Drain-source On Resistance-Max:
0.0116 Ω
FET Technology:
METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss):
30 pF
JESD-30 Code:
S-PDSO-N8
JESD-609 Code:
e4
Moisture Sensitivity Level:
1
Number of Elements:
2
Number of Terminals:
8
Operating Mode:
ENHANCEMENT MODE
Package Body Material:
PLASTIC/EPOXY
Package Shape:
SQUARE
Package Style:
SMALL OUTLINE
Peak Reflow Temperature (Cel):
260
Polarity/Channel Type:
N-CHANNEL
Surface Mount:
YES
Terminal Finish:
Nickel/Palladium/Gold/Silver (Ni/Pd/Au/Ag)
Terminal Form:
NO LEAD
Terminal Position:
DUAL
Time@Peak Reflow Temperature-Max (s):
30
Transistor Application:
SWITCHING
Transistor Element Material:
SILICON
FDMC007N30D Frequently Asked Questions (FAQs)
The maximum operating temperature range for the FDMC007N30D is -55°C to 150°C.
To ensure proper biasing, the FDMC007N30D requires a gate-source voltage (Vgs) of 10-15V and a drain-source voltage (Vds) of 30V or less. Additionally, a gate resistor (Rg) of 1-10kΩ is recommended to prevent oscillations.
For optimal thermal performance, it is recommended to use a PCB with a thermal pad and a heat sink. The device should be placed near a thermal via or a heat sink to dissipate heat efficiently. A minimum of 2oz copper thickness is recommended for the PCB.
To protect the FDMC007N30D from ESD, it is recommended to use an ESD protection device, such as a TVS diode, in parallel with the device. Additionally, handling the device with an ESD wrist strap or mat, and storing it in an ESD-safe environment, can prevent ESD damage.
The maximum current rating for the FDMC007N30D is 7A. However, the device can handle higher currents for short durations, but the average current should not exceed 7A to prevent overheating.
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FDMC007N30D Overview
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