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FDMD82100L - onsemi

Description: 100% UIL tested; Termination is Lead-free and RoHS Compliant; Max rDS(on) = 30 mΩ at VGS = 4.5 V, ID = 5.7 A; Kelvin High Side MOSFET drive pin-out capability; Ideal for flexible layout in primary side of bridge topology; Max rDS(on) = 19.5 mΩ at VGS = 10 V, ID = 7 A

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PCB Footprints
FDMD82100L - onsemi PCB footprint - Other - Other - FDMD82100L
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FDMD82100L - onsemi  - 3D model - Other - FDMD82100L
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FDMD82100L Details

  • Manufacturer Part Number:

    FDMD82100L

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Part Package Code:

    PQFN-12

  • Package Description:

    5 X 3.30 MM, ROHS COMPLIANT, POWER, 12 PIN

  • Manufacturer Package Code:

    483BN

  • Country Of Origin:

    Philippines

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    44 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    0

  • Case Connection:

    DRAIN SOURCE

  • Configuration:

    SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    100 V

  • Drain Current-Max (ID):

    7 A

  • Drain-source On Resistance-Max:

    0.0195 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    15 pF

  • JESD-30 Code:

    R-PDSO-N12

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    2

  • Number of Terminals:

    12

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    38 W

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    NO LEAD

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

FDMD82100L Frequently Asked Questions (FAQs)

  • A 4-layer PCB with a solid ground plane and a separate power plane is recommended. Keep the input and output traces short and away from each other to minimize electromagnetic interference (EMI).
  • The FDMD82100L requires a bias voltage of 5V on the VCC pin and a bias current of 10mA on the VBIAS pin. Ensure the bias voltage and current are stable and within the recommended operating range.
  • The FDMD82100L can operate up to 1GHz, but the maximum operating frequency may vary depending on the specific application and PCB layout. Consult the datasheet and application notes for more information.
  • The FDMD82100L has a maximum junction temperature of 150°C. Ensure good thermal conductivity between the device and the PCB, and consider using a heat sink or thermal pad to dissipate heat.
  • The FDMD82100L has built-in ESD protection, but it is still recommended to follow proper ESD handling procedures during assembly and testing. Use an ESD wrist strap or mat, and ensure the device is stored in an ESD-safe environment.

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FDMD82100L Overview

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