SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE
DS Breakdown Voltage-Min:
60 V
Drain Current-Max (ID):
64 A
Drain-source On Resistance-Max:
0.0058 Ω
FET Technology:
METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss):
50 pF
JESD-30 Code:
R-PDSO-N12
JESD-609 Code:
e3
Moisture Sensitivity Level:
1
Number of Elements:
2
Number of Terminals:
12
Operating Mode:
ENHANCEMENT MODE
Operating Temperature-Max:
150 °C
Operating Temperature-Min:
-55 °C
Package Body Material:
PLASTIC/EPOXY
Package Shape:
RECTANGULAR
Package Style:
SMALL OUTLINE
Peak Reflow Temperature (Cel):
260
Polarity/Channel Type:
N-CHANNEL
Power Dissipation-Max (Abs):
37 W
Surface Mount:
YES
Terminal Finish:
Matte Tin (Sn) - annealed
Terminal Form:
NO LEAD
Terminal Position:
DUAL
Time@Peak Reflow Temperature-Max (s):
30
Transistor Application:
SWITCHING
Transistor Element Material:
SILICON
FDMD8260L Frequently Asked Questions (FAQs)
A 4-layer PCB with a solid ground plane and a separate power plane is recommended. Keep the input and output traces short and away from each other to minimize electromagnetic interference (EMI).
The FDMD8260L requires a bias voltage of 2.5V to 5.5V. Ensure the bias voltage is stable and noise-free, and that the bias pin is decoupled with a 10nF capacitor to ground.
The FDMD8260L can handle input powers up to +10dBm. Exceeding this limit may cause damage to the device or affect its performance.
To minimize power consumption, ensure the device is operated at the lowest possible supply voltage (2.5V) and that the bias current is minimized. Additionally, consider using a low-power mode or shutdown mode when the device is not in use.
The FDMD8260L is designed to operate within a temperature range of -40°C to 85°C. Operating outside this range may affect the device's performance or reliability.
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FDMD8260L Overview
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