Please enter a minimum 3 letters or numbers
Technical Content
Part Image

FDMD8280 - onsemi

Description: MOSFET FET 80V 8.2 MOHM PQFN

Download FDMD8280 Model
Schematic
symbols
Schematic symbol is unavailable for download
PCB
footprints
PCB footprint is unavailable for download
3D
models
3D model is unavailable for download
Send part feedback
Symbol
FDMD8280 - onsemi - PCB symbol
click to zoom
PCB Footprints
FDMD8280 - onsemi PCB footprint - Other - Other - PQFN12 3.3X5, 0.65P CASE 483BN
click to zoom
3D Models
FDMD8280 - onsemi - 3D model - Other - PQFN12 3.3X5, 0.65P CASE 483BN
click to zoom

FDMD8280 Details

  • Manufacturer Part Number:

    FDMD8280

  • Brand Name:

    ON Semiconductor

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Package Description:

    5 X 3.30 MM, ROHS COMPLIANT, POWER, 12 PIN

  • Manufacturer Package Code:

    483BN

  • Country Of Origin:

    Philippines

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    4 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    0

  • Case Connection:

    DRAIN SOURCE

  • Configuration:

    SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    80 V

  • Drain Current-Max (ID):

    11 A

  • Drain-source On Resistance-Max:

    0.0082 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    25 pF

  • JESD-30 Code:

    R-PDSO-N12

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    2

  • Number of Terminals:

    12

  • Operating Mode:

    ENHANCEMENT MODE

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Surface Mount:

    YES

  • Terminal Finish:

    MATTE TIN

  • Terminal Form:

    NO LEAD

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

FDMD8280 Frequently Asked Questions (FAQs)

  • A 4-layer PCB with a solid ground plane and a separate power plane is recommended. Keep the input and output traces short and away from each other to minimize crosstalk.
  • The FDMD8280 requires a bias voltage of 3.3V or 5V. Ensure the bias voltage is stable and noise-free, and that the input and output pins are properly terminated to prevent oscillations.
  • The FDMD8280 can operate up to 2.7 GHz, but the maximum frequency may vary depending on the specific application and PCB layout. Consult the datasheet and application notes for more information.
  • The FDMD8280 has a maximum junction temperature of 150°C. Ensure good airflow around the device, and consider using a heat sink or thermal pad to dissipate heat. Monitor the device temperature and adjust the thermal management strategy accordingly.
  • The FDMD8280 has internal ESD protection, but it is still recommended to follow proper ESD handling procedures during assembly and testing. Use an ESD wrist strap or mat, and ensure the device is properly grounded during handling.

Trust Checks

This model has been provided by an expert contributor.
Expert Contribution
This model has been verified by system checks.
System Verified
This model has been reviewed by community users.
Community Approved
Sponsored

FDMD8280 Overview

Use the download button to access the FDMD8280 schematic symbol, PCB footprint, and 3D model.
To find more CAD model downloads similar to this part, try a partial part number search, like FDMD8, or try a keyword search, such as Small Signal Field-Effect Transistors

Parts related to FDMD8280

Showing 0 results

Part Image

← Prev Next →
About Us Contact Us Terms of Service Do not sell or share my personal information Privacy Policy Digital Services Act Library Loader Twitter LinkedIn

All content Copyright © 2020, Supplyframe.com. All rights reserved. Back to top ↑