Description:Max rDS(on) = 2.2 mΩ at VGS = 8 V, ID = 27 A ; RoHS Compliant ; Max rDS(on) = 1.65 mΩ at VGS = 10 V, ID = 32 A ; MSL1 robust package design ; Advanced Package and Silicon combination for low rDS(on) and high efficiency ; Extended TJ rating to 175°C; 100% UIL tested
A 2-layer or 4-layer PCB with a solid ground plane and thermal vias is recommended. The device should be placed near a thermal pad or heat sink to dissipate heat efficiently.
Ensure proper heat sinking, use a thermal interface material, and follow the recommended PCB layout guidelines. Also, consider derating the device's power handling at high temperatures.
The maximum allowed voltage on the gate driver output is 15V, but it's recommended to keep it below 12V to ensure reliable operation and minimize electromagnetic interference (EMI).
Yes, the FDMS86550ET60 can be used in a half-bridge configuration, but ensure proper dead-time management and synchronization between the high-side and low-side switches to prevent shoot-through currents.
Use a shielded cable for the gate driver output, keep the PCB layout compact, and use a common-mode choke or ferrite bead to filter the output. Also, ensure proper grounding and decoupling of the device.
Trust Checks
No trust score is available for this model.
Trust Score Unavailable
Sponsored
FDMS86550ET60 Overview
Use the download button to access the FDMS86550ET60 3D model. You can still request or build the schematic symbol and PCB footprint by using the respective build or request forms on this page.
To find more CAD model downloads similar to this part, try a partial part number search, like FDMS8,
or try a keyword search, such as Power Field-Effect Transistors
