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FDN302P - onsemi

Description: RDS(ON)= 0.055Ω @ VGS = –4.5 V ; High performance trench technology for extremely low RDS(ON); Fast switching speed; SuperSOT™ -3 provides low RDS(ON) and 30% higher power handling capability than SOT23 in the samefootprint; RDS(ON) = 0.080Ω @ VGS = –2.5 V; –20 A, –2.4 V.

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PCB Footprints
FDN302P - onsemi PCB footprint - SOT23 (3-Pin) - SOT23 (3-Pin) - SOT-23-3-ren3
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3D Models
FDN302P - onsemi  - 3D model - SOT23 (3-Pin) - SOT-23-3-ren3
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FDN302P Details

  • Manufacturer Part Number:

    FDN302P

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    SOT-23-3

  • Package Description:

    SUPERSOT-3

  • Manufacturer Package Code:

    527AG

  • Country Of Origin:

    Philippines

  • ECCN Code:

    EAR99

  • Manufacturer:

    onsemi

  • YTEOL:

    6.95

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    20 V

  • Drain Current-Max (ID):

    2.4 A

  • Drain-source On Resistance-Max:

    0.055 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JESD-30 Code:

    R-PDSO-G3

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    P-CHANNEL

  • Power Dissipation-Max (Abs):

    0.5 W

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

FDN302P Frequently Asked Questions (FAQs)

  • The FDN302P can operate from -40°C to 150°C, making it suitable for high-reliability applications.
  • To ensure proper biasing, connect the gate to a voltage source through a resistor, and the source to ground through another resistor. The recommended biasing voltage is typically around 10-15V.
  • The FDN302P has a maximum continuous drain current rating of 2.5A, and a peak current rating of 5A for 10ms pulses.
  • To protect the FDN302P from ESD, handle the device with an anti-static wrist strap or mat, and ensure that the device is stored in an anti-static bag or tube.
  • For optimal thermal performance, use a PCB layout with a large copper area for heat dissipation, and ensure that the device is mounted on a heat sink or thermal pad.

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FDN302P Overview

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