Part Image

FDN308P - onsemi

Description: Fast switching speed; SuperSOT™ -3 provides low RDS(ON) and 30% higher power handling capability than SOT23 in the samefootprint; –20 A, –1.5 V. ; RDS(ON)= 125 mΩ @ VGS = –4.5 V ; RDS(ON) = 190 mΩ @ VGS = –2.5 V; High performance trench technology for extremelylow RDS(ON)

Download FDN308P Model
Schematic
symbols
Schematic symbol is unavailable for download
PCB
footprints
PCB footprint is unavailable for download
3D
models
3D model is unavailable for download
PCB Footprints
FDN308P - onsemi PCB footprint - SOT23 (3-Pin) - SOT23 (3-Pin) - SOT-23_2020
click to zoom
3D Models
FDN308P - onsemi  - 3D model - SOT23 (3-Pin) - SOT-23_2020
click to zoom

FDN308P Details

  • Manufacturer Part Number:

    FDN308P

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    SOT-23-3

  • Manufacturer Package Code:

    527AG

  • Country Of Origin:

    Philippines

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    13 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    6.9

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    20 V

  • Drain Current-Max (ID):

    1.5 A

  • Drain-source On Resistance-Max:

    0.125 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JESD-30 Code:

    R-PDSO-G3

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    P-CHANNEL

  • Power Dissipation-Max (Abs):

    0.5 W

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

FDN308P Frequently Asked Questions (FAQs)

  • The FDN308P can operate from -40°C to 150°C, making it suitable for high-reliability applications.
  • The FDN308P requires a bias voltage of 12V to 15V on the gate pin (pin 1) to ensure proper operation. A 1kΩ to 10kΩ resistor can be used to limit the gate current.
  • The FDN308P has a maximum continuous drain current rating of 3A, and a peak current rating of 6A for 10ms pulses.
  • Use a TVS diode or a zener diode to clamp the voltage and protect the FDN308P from overvoltage. Additionally, follow proper ESD handling procedures to prevent damage during handling and assembly.
  • Use a low-impedance PCB layout with short traces and minimal inductance to minimize voltage drops and ensure proper operation. A 2-layer or 4-layer PCB is recommended.

Trust Checks

This model has been built in collaboration with the manufacturer.
Manufacturer Collaborated
This model has been verified by system checks.
System Verified
This model has been reviewed by community users.
Community Approved
Sponsored

FDN308P Overview

Use the download button to access the FDN308P schematic symbol, PCB footprint, and 3D model.
To find more CAD model downloads similar to this part, try a partial part number search, like FDN30, or try a keyword search, such as Small Signal Field-Effect Transistors

Parts related to FDN308P

Showing 0 results

FDN308P Alternates

Showing results

Image Part Number Model
Part Image FDN308P Fairchild Semiconductor Corporation

Small Signal Field-Effect Transistor, 1.5A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET

Part Image FDN308PD87Z Fairchild Semiconductor Corporation

Small Signal Field-Effect Transistor, 1.5A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET

Part Image FDN308P_NL Fairchild Semiconductor Corporation

Small Signal Field-Effect Transistor, 1.5A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET

Part Image FDN308PT/R_NL Fairchild Semiconductor Corporation

Small Signal Field-Effect Transistor, 1.5A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET

Part Image LT2349E Lite-On Semiconductor Corporation

Small Signal Field-Effect Transistor, 1.88A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET

For a full list of alternate parts for FDN308P, check out Findchips.com