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FDN358P - onsemi

Description: High Performance Trench Technology for Extremely Low rDS(on); High Power Version of Industry Standard SOT-23 Package. Identical Pin-Out to SOT-23 with 30% Higher Power Handling Capability; RDS(ON) = 200 mΩ @ VGS = 4.5 V. ; -1.5 A, -30 V; Low Gate Charge (4 nC typical); RDS(ON) = 125 mΩ @ VGS = 10 V

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PCB Footprints
FDN358P - onsemi PCB footprint - SOT23 (3-Pin) - SOT23 (3-Pin) - SOT-23-65
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3D Models
FDN358P - onsemi  - 3D model - SOT23 (3-Pin) - SOT-23-65
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FDN358P Details

  • Manufacturer Part Number:

    FDN358P

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    SOT-23-3

  • Package Description:

    SUPERSOT-3

  • Manufacturer Package Code:

    527AG

  • Country Of Origin:

    Philippines

  • ECCN Code:

    EAR99

  • Manufacturer:

    onsemi

  • YTEOL:

    6.9

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    30 V

  • Drain Current-Max (ID):

    1.5 A

  • Drain-source On Resistance-Max:

    0.125 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JESD-30 Code:

    R-PDSO-G3

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    P-CHANNEL

  • Power Dissipation-Max (Abs):

    0.5 W

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

FDN358P Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for the FDN358P is -40°C to 150°C.
  • To ensure proper biasing, connect the gate to a voltage source through a resistor, and connect the source to ground through a resistor. The recommended biasing voltage is typically between 4.5V to 5.5V.
  • The maximum current rating for the FDN358P is 3.5A.
  • To protect the FDN358P from ESD, handle the device with an anti-static wrist strap or mat, and ensure that the device is stored in an anti-static bag or container.
  • Yes, the FDN358P is suitable for high-frequency applications up to 1 GHz. However, it's essential to consider the device's parasitic capacitance and inductance when designing the circuit.

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FDN358P Overview

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