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FDN361BN - onsemi

Description: Obsolete - N-Channel PowerTrench MOSFET 75V, 235A, 3.2mΩ

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PCB Footprints
FDN361BN - onsemi PCB footprint - SOT23 (3-Pin) - SOT23 (3-Pin) - SOT−23/SUPERSOT−23, 3 LEAD, 1.4x2.9
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3D Models
FDN361BN - onsemi  - 3D model - SOT23 (3-Pin) - SOT−23/SUPERSOT−23, 3 LEAD, 1.4x2.9
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FDN361BN Details

  • Manufacturer Part Number:

    FDN361BN

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Part Package Code:

    SOT-23-3

  • Package Description:

    SOT-23, 3 PIN

  • Manufacturer Package Code:

    527AG

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    4 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    0

  • Additional Feature:

    FAST SWITCHING

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    30 V

  • Drain Current-Max (ID):

    1.4 A

  • Drain-source On Resistance-Max:

    0.11 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    23 pF

  • JESD-30 Code:

    R-PDSO-G3

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    0.5 W

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    MATTE TIN

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

FDN361BN Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for the FDN361BN is -40°C to 150°C.
  • To ensure proper biasing, connect the gate to a voltage source through a resistor, and connect the source to a voltage source or ground through a resistor. Consult the datasheet for specific biasing recommendations.
  • The maximum current rating for the FDN361BN is 3.5A.
  • To protect the FDN361BN from ESD, handle the device with an anti-static wrist strap or mat, and ensure all equipment is properly grounded. Avoid touching the device's pins or leads.
  • Yes, the FDN361BN is suitable for high-frequency applications up to 1 GHz. However, ensure proper PCB layout and component selection to minimize parasitic inductance and capacitance.

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FDN361BN Overview

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Image Part Number Model
Part Image FDN361BN Rochester Electronics LLC

1400mA, 30V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, SOT-23, 3 PIN

Part Image FDN361BN Fairchild Semiconductor Corporation

Small Signal Field-Effect Transistor, 1.4A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET