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FDN5632N-F085 - onsemi

Description: Qualified to AEC Q101 ; Typ Qg(TOT) = 9.2 nC at VGS = 10 V; Low Miller Charge ; RoHS Compliant; RDS(on) = 98 mΩ at VGS = 4.5 V, ID = 1.6 A; RDS(on) = 82 mΩ at VGS = 10 V, ID = 1.7 A

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Symbol
FDN5632N-F085 - onsemi - PCB symbol
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PCB Footprints
FDN5632N-F085 - onsemi PCB footprint - SOT23 (3-Pin) - SOT23 (3-Pin) - SOT−23, 3 Lead
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3D Models
FDN5632N-F085 - onsemi - 3D model - SOT23 (3-Pin) - SOT−23, 3 Lead
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FDN5632N-F085 Details

  • Manufacturer Part Number:

    FDN5632N-F085

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Not Recommended

  • Part Package Code:

    SSOT 3L

  • Package Description:

    ROHS COMPLIANT, SUPERSOT-3

  • Manufacturer Package Code:

    527AG

  • Reach Compliance Code:

    Compliant

  • Country Of Origin:

    Mainland China, Malaysia, Philippines, Thailand, Vietnam

  • ECCN Code:

    EAR99

  • Manufacturer:

    onsemi

  • YTEOL:

    3

  • Configuration:

    SINGLE

  • Drain Current-Max (ID):

    1.7 A

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JESD-30 Code:

    R-PDSO-G3

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    1.1 W

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

FDN5632N-F085 Frequently Asked Questions (FAQs)

  • A 2-layer or 4-layer PCB with a thermal relief pattern and a solid ground plane is recommended. The device should be placed near a thermal pad or a heat sink to dissipate heat efficiently.
  • The device requires a stable input voltage and a bias voltage (VCC) between 4.5V to 5.5V. Ensure the input voltage is within the recommended range and the bias voltage is decoupled with a 10uF capacitor.
  • The maximum allowable power dissipation is 1.4W. Ensure the device is operated within the recommended power dissipation limits to prevent overheating and damage.
  • The device is rated for operation up to 150°C. However, the maximum junction temperature (Tj) should not exceed 175°C. Ensure proper heat sinking and thermal management to prevent overheating.
  • Handle the device with an anti-static wrist strap or mat. Ensure the PCB is designed with ESD protection in mind, including TVS diodes and resistors to prevent ESD damage.

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FDN5632N-F085 Overview

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Part Image FDN5632N_F085 onsemi

Power Field-Effect Transistor, 1.7A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET