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FDS4435A - onsemi

Description: MOSFET SO-8 P-CH -30V

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FDS4435A - onsemi - PCB symbol
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PCB Footprints
FDS4435A - onsemi PCB footprint - Small Outline Packages - Small Outline Packages - SOIC-8 (FS PKG Code S1)
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FDS4435A - onsemi - 3D model - Small Outline Packages - SOIC-8 (FS PKG Code S1)
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FDS4435A Details

  • Manufacturer Part Number:

    FDS4435A

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Package Description:

    SOP-8

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    4 Weeks

  • Date Of Intro:

    2017-11-07

  • Manufacturer:

    onsemi

  • YTEOL:

    0

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    30 V

  • Drain Current-Max (ID):

    9 A

  • Drain-source On Resistance-Max:

    0.017 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JESD-30 Code:

    R-PDSO-G8

  • JESD-609 Code:

    e4

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    8

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    P-CHANNEL

  • Power Dissipation-Max (Abs):

    2.5 W

  • Surface Mount:

    YES

  • Terminal Finish:

    NICKEL PALLADIUM GOLD

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

FDS4435A Frequently Asked Questions (FAQs)

  • The FDS4435A can operate from -40°C to 150°C, making it suitable for high-reliability applications.
  • To ensure proper biasing, connect the gate to a voltage source through a resistor (e.g., 1 kΩ) and connect the source to ground through a resistor (e.g., 1 kΩ). This will provide a stable voltage reference.
  • To minimize parasitic inductance, use a compact PCB layout with short, wide traces. Place the FDS4435A near the power source and use a solid ground plane to reduce inductance. Avoid using vias or narrow traces near the device.
  • Yes, the FDS4435A is suitable for high-frequency switching applications up to 1 MHz. However, ensure proper PCB layout and decoupling to minimize ringing and electromagnetic interference (EMI).
  • Handle the FDS4435A with ESD-protective equipment and follow proper ESD-handling procedures. Use an ESD-protective wrist strap or mat, and ensure the workspace is ESD-safe.

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FDS4435A Overview

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