Part Image

FDV303N - onsemi

Description: RDS(ON) = 0.45 Ω @ VGS= 4.5 V ; RDS(ON) = 0.6 Ω @ VGS= 2.7 V; 25 V, 0.68 A continuous, 2 A Peak; Very low level gate drive requirements allowing direct operation in 3V circuits. VGS(th) < 1.0V; Gate-Source Zener for ESD ruggedness. >6kV Human Body Model; Compact industry standard SOT-23 surface mount package; Alternative to TN0200T and TN0201T

Download FDV303N Model
Schematic
symbols
Schematic symbol is unavailable for download
PCB
footprints
PCB footprint is unavailable for download
3D
models
3D model is unavailable for download
PCB Footprints
FDV303N - onsemi PCB footprint - SOT23 (3-Pin) - SOT23 (3-Pin) - SOT−23 (TO−236
click to zoom
3D Models
FDV303N - onsemi  - 3D model - SOT23 (3-Pin) - SOT−23 (TO−236
click to zoom

FDV303N Details

  • Manufacturer Part Number:

    FDV303N

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    SOT-23 (TO-236) 2.90x1.30x1.00, 1.90P

  • Manufacturer Package Code:

    318

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    11 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    6.9

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    25 V

  • Drain Current-Max (ID):

    0.68 A

  • Drain-source On Resistance-Max:

    0.45 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JESD-30 Code:

    R-PDSO-G3

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    0.35 W

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

FDV303N Frequently Asked Questions (FAQs)

  • The FDV303N can operate from -40°C to 150°C, making it suitable for high-reliability applications.
  • The FDV303N requires a bias voltage of 5V to 15V, and the recommended bias current is 1mA to 10mA. Ensure the bias voltage is stable and noise-free for optimal performance.
  • Use a ground plane under the device, keep the leads as short as possible, and avoid routing high-frequency signals near the device. Also, use a bypass capacitor (e.g., 100nF) between the bias pin and ground to reduce noise.
  • Yes, the FDV303N is suitable for switching power supply applications due to its high voltage and current handling capabilities. However, ensure the device is properly biased and the PCB layout is optimized for high-frequency operation.
  • Handle the device with ESD-protective equipment, and ensure the PCB has ESD protection circuits, such as TVS diodes or ESD-protection arrays, to prevent damage from static electricity.

Trust Checks

This model has been built in collaboration with the manufacturer.
Manufacturer Collaborated
This model has been verified by system checks.
System Verified
This model has been reviewed by community users.
Community Approved
Sponsored

FDV303N Overview

Use the download button to access the FDV303N schematic symbol, PCB footprint, and 3D model.
To find more CAD model downloads similar to this part, try a partial part number search, like FDV30, or try a keyword search, such as Small Signal Field-Effect Transistors

Parts related to FDV303N

Showing 0 results

FDV303N Alternates

Showing results

Image Part Number Model
Part Image FDV303N Rochester Electronics LLC

680mA, 25V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET

Part Image ME2324D Force Mos Technology Co Ltd

Small Signal Field-Effect Transistor, 0.71A I(D), 25V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

Part Image FDV303N_NL Fairchild Semiconductor Corporation

Small Signal Field-Effect Transistor, 0.68A I(D), 25V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

Part Image FDV303NS62Z Fairchild Semiconductor Corporation

Small Signal Field-Effect Transistor, 0.68A I(D), 25V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

Part Image FDV303ND87Z Fairchild Semiconductor Corporation

Small Signal Field-Effect Transistor, 0.68A I(D), 25V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

For a full list of alternate parts for FDV303N, check out Findchips.com