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FDV304P-F169 - onsemi

Description: P-Channel Digital FET -25V, -0.46A, 1.1Ω

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FDV304P-F169 Details

  • Manufacturer Part Number:

    FDV304P-F169

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Part Package Code:

    SOT-23 (TO-236) 2.90x1.30x1.00, 1.90P

  • Manufacturer Package Code:

    318

  • ECCN Code:

    EAR99

  • HTS Code:

    8541.21.00.95

  • Manufacturer:

    onsemi

  • YTEOL:

    0

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    25 V

  • Drain Current-Max (ID):

    0.46 A

  • Drain-source On Resistance-Max:

    1.1 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    10 pF

  • JEDEC-95 Code:

    TO-236

  • JESD-30 Code:

    R-PDSO-G3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    P-CHANNEL

  • Power Dissipation Ambient-Max:

    0.35 W

  • Power Dissipation-Max (Abs):

    0.35 W

  • Surface Mount:

    YES

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

FDV304P-F169 Frequently Asked Questions (FAQs)

  • The recommended operating voltage range for the FDV304P-F169 is 2.7V to 5.5V.
  • To ensure proper biasing, connect the VCC pin to a stable voltage source, and decouple it with a 1uF capacitor to ground. Also, ensure the input voltage is within the recommended operating range.
  • The maximum current rating for the FDV304P-F169 is 100mA. Exceeding this rating may cause damage to the device.
  • To prevent ESD damage, handle the FDV304P-F169 with an anti-static wrist strap or mat, and ensure the workspace is ESD-protected. Avoid touching the device's pins or handling it in a way that may generate static electricity.
  • The thermal resistance (RθJA) of the FDV304P-F169 is 240°C/W. This value is critical for thermal management and heat dissipation in the system design.

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FDV304P-F169 Overview

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Part Image FDV304P onsemi

Small Signal Field-Effect Transistor, 0.46A I(D), 25V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236

Part Image FDV304P Fairchild Semiconductor Corporation

Small Signal Field-Effect Transistor, 0.46A I(D), 25V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET

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Part Image FDV304P_NB8U003 Fairchild Semiconductor Corporation

Small Signal Field-Effect Transistor, 0.46A I(D), 1-Element, P-Channel, Metal-oxide Semiconductor FET

Part Image FDV304PD87Z Fairchild Semiconductor Corporation

Small Signal Field-Effect Transistor, 0.46A I(D), 25V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET

For a full list of alternate parts for FDV304P-F169, check out Findchips.com