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FDV304P - onsemi

Description: Very low level gate drive requirements allowing direct operation in 3V circuits. VGS(th) < 1.5V.; Gate-Source Zener for ESD ruggedness. >6kV Human Body Model.; Compact industry standard SOT-23 surface mount package.; -25 V, -0.46 A continuous, -1.5 A Peak.  RDS(ON) = 1.1 Ω @ VGS = -4.5 V,  RDS(ON) = 1.5 Ω @ VGS = -2.7 V

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FDV304P - onsemi PCB footprint - SOT23 (3-Pin) - SOT23 (3-Pin) - SOT-23-ren10
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FDV304P - onsemi  - 3D model - SOT23 (3-Pin) - SOT-23-ren10
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FDV304P Details

  • Manufacturer Part Number:

    FDV304P

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    SOT-23 (TO-236) 2.90x1.30x1.00, 1.90P

  • Manufacturer Package Code:

    318

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • HTS Code:

    8541.21.00.95

  • Manufacturer:

    onsemi

  • YTEOL:

    6.5

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    25 V

  • Drain Current-Max (ID):

    0.46 A

  • Drain-source On Resistance-Max:

    1.1 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    10 pF

  • JEDEC-95 Code:

    TO-236

  • JESD-30 Code:

    R-PDSO-G3

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    P-CHANNEL

  • Power Dissipation Ambient-Max:

    0.35 W

  • Power Dissipation-Max (Abs):

    0.35 W

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

FDV304P Frequently Asked Questions (FAQs)

  • The recommended operating voltage range for the FDV304P is 2.7V to 5.5V.
  • To ensure proper biasing, connect the EN pin to a voltage source (e.g., VCC) through a 10kΩ resistor, and connect the IN pin to a voltage source (e.g., VCC) through a 1kΩ resistor.
  • The maximum current rating for the FDV304P is 100mA.
  • To ensure ESD protection, use a TVS (Transient Voltage Suppressor) diode or a Zener diode with a voltage rating higher than the maximum operating voltage of the FDV304P.
  • The FDV304P is rated for operation up to 125°C. However, it's recommended to derate the device's performance at high temperatures to ensure reliability.

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FDV304P Overview

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Part Image FDV304P Fairchild Semiconductor Corporation

Small Signal Field-Effect Transistor, 0.46A I(D), 25V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET

Part Image FDV304P_NB8U002A Fairchild Semiconductor Corporation

Transistor

Part Image FDV304P-F169 onsemi

Small Signal Field-Effect Transistor, 0.46A I(D), 25V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236

Part Image FDV304P_NB8U003 Fairchild Semiconductor Corporation

Small Signal Field-Effect Transistor, 0.46A I(D), 1-Element, P-Channel, Metal-oxide Semiconductor FET

Part Image FDV304PD87Z Fairchild Semiconductor Corporation

Small Signal Field-Effect Transistor, 0.46A I(D), 25V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET

For a full list of alternate parts for FDV304P, check out Findchips.com