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FGB3056-F085 - onsemi

Description: Lifetime - IGBT, 360V, 27A, 1.32V, 320mJ, EcoSPARK II, N-Channel Ignition

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FGB3056-F085 - onsemi PCB footprint - Other - Other - FGB3056-F085-1
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FGB3056-F085 Details

  • Manufacturer Part Number:

    FGB3056-F085

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Part Package Code:

    TO-263 2L (D2PAK)

  • Manufacturer Package Code:

    418AJ

  • Reach Compliance Code:

    Not Compliant

  • Country Of Origin:

    Philippines

  • ECCN Code:

    EAR99

  • Manufacturer:

    onsemi

  • YTEOL:

    0

  • Case Connection:

    COLLECTOR

  • Collector Current-Max (IC):

    29 A

  • Collector-Emitter Voltage-Max:

    560 V

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • Fall Time-Max (tf):

    1800 ns

  • Gate-Emitter Thr Voltage-Max:

    2.2 V

  • JEDEC-95 Code:

    TO-263AB

  • JESD-30 Code:

    R-PSSO-G2

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    2

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -40 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    200 W

  • Rise Time-Max (tr):

    2400 ns

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    AUTOMOTIVE IGNITION

  • Transistor Element Material:

    SILICON

  • Turn-off Time-Max (toff):

    10000 ns

  • Turn-off Time-Nom (toff):

    6200 ns

  • Turn-on Time-Max (ton):

    3700 ns

  • Turn-on Time-Nom (ton):

    1560 ns

  • VCEsat-Max:

    1.55 V

FGB3056-F085 Frequently Asked Questions (FAQs)

  • A good PCB layout for optimal thermal performance involves placing thermal vias under the device, using a solid ground plane, and keeping the thermal path as short as possible. It's also recommended to use a thermal pad on the bottom of the device.
  • To ensure reliable operation in high-temperature environments, it's essential to follow the recommended operating temperature range, use a suitable heat sink, and ensure good airflow around the device. Additionally, consider using thermal interface materials and following proper soldering techniques.
  • Critical parameters to monitor during operation to prevent overheating include the device's junction temperature (Tj), case temperature (Tc), and power dissipation (PD). It's also important to monitor the input voltage, current, and output voltage to ensure they are within the recommended operating ranges.
  • To calculate the maximum allowable power dissipation, you need to consider the device's thermal resistance (Rthja), the maximum junction temperature (Tjmax), and the ambient temperature (Ta). Use the formula: PDmax = (Tjmax - Ta) / Rthja. Consult the datasheet for the specific values.
  • To prevent electrostatic discharge (ESD) damage, handle the device with anti-static wrist straps, mats, or bags. Use ESD-protected workstations and follow proper assembly procedures, such as grounding the device during soldering. Avoid touching the device's pins or exposed internal components.

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FGB3056-F085 Overview

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Part Image FGB3056_F085 onsemi

Insulated Gate Bipolar Transistor, 29A I(C), 560V V(BR)CES, N-Channel, TO-263AB