FGB30 Model Download Search Results

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Image Part Number D.S Description Package Category Prices / Stock Model Action
Image Part Number D.S Description Package Category Prices / Stock Model Action
Part Image Part Image 1 SCIS Energy = 300mJ at TJ = 25°C; Logic Level Gate Drive; Qualified to AEC Q101; RoHS Compliant Other FGB3040G2-F085C 1 Download Model
Part Image Part Image 1 SCIS Energy = 300mJ at TJ = 25°C; Logic Level Gate Drive; RoHS Compliant; Qualified to AEC Q101 Other FGB3040G2-F085 1 Download Model
Part Image Part Image 1 Lifetime - IGBT, 360V, 27A, 1.32V, 320mJ, EcoSPARK II, N-Channel Ignition Other FGB3056-F085 1 Download Model
Part Image Part Image 1 AEC-Q101 Qualified; VCE(sat) = 1.6 V (typ.) @ IC = 30 A; Low VF soft recovery co-packaged diode Other AFGB30T65SQDN 1 Download Model
Part Image Part Image 1 Insulated Gate Bipolar Transistor, 29A I(C), 560V V(BR)CES, N-Channel, TO-263AB FGB3056_F085 0 Build or Request
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FGB3040G2_F085 Fairchild Semiconductor Corporation
1 Insulated Gate Bipolar Transistor, 41A I(C), 390V V(BR)CES, N-Channel FGB3040G2_F085 0 Build or Request
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FGB30N6S2T Rochester Electronics LLC
1 45A, 600V, N-CHANNEL IGBT, TO-263AB, PLASTIC, D2PAK-3 FGB30N6S2T 0 Build or Request
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FGB30N6S2T Fairchild Semiconductor Corporation
1 Insulated Gate Bipolar Transistor, 45A I(C), 600V V(BR)CES, N-Channel, TO-263AB FGB30N6S2T 0 Build or Request
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FGB30N6S2DT Fairchild Semiconductor Corporation
1 Insulated Gate Bipolar Transistor, 45A I(C), 600V V(BR)CES, N-Channel, TO-263AB FGB30N6S2DT 0 Build or Request
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FGB30N6S2D Fairchild Semiconductor Corporation
1 Insulated Gate Bipolar Transistor, 45A I(C), 600V V(BR)CES, N-Channel, TO-263AB FGB30N6S2D 0 Build or Request
Part Image Part Image 1 400V, 26A, 1.35V, 300mJ, D2PAK EcoSPARK® II, N-Channel Ignition IGBT, TO-263 2L (D2PAK), 800-TAPE REEL FGB3040G2_F085 0 Build or Request
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FGB30N6S2 Rochester Electronics LLC
1 45A, 600V, N-CHANNEL IGBT, TO-263AB, PLASTIC, D2PAK-3 FGB30N6S2 0 Build or Request
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FGB3040CS Fairchild Semiconductor Corporation
1 Insulated Gate Bipolar Transistor, 21A I(C), 430V V(BR)CES, N-Channel FGB3040CS 0 Build or Request
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FGB3056_F085 Fairchild Semiconductor Corporation
1 Insulated Gate Bipolar Transistor FGB3056_F085 0 Build or Request
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FGB30N6S2 Fairchild Semiconductor Corporation
1 Insulated Gate Bipolar Transistor, 45A I(C), 600V V(BR)CES, N-Channel, TO-263AB FGB30N6S2 0 Build or Request
Part Image Part Image 1 IGBT, 430V, 19A, 1.6V, 300mJ, D2PAK, Current Sensing EcoSPARK® I, N-Channel Ignition FGB3040CS 1 Download Model
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MXBBFGB30M0 MERITEK Electronics Corporation
1 Parallel - Fundamental Quartz Crystal, 30MHz Nom MXBBFGB30M0 0 Build or Request
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MXBKFGB30M01 MERITEK Electronics Corporation
1 Parallel - Fundamental Quartz Crystal, 30.01MHz Nom MXBKFGB30M01 0 Build or Request
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MXBCFGB30M01 MERITEK Electronics Corporation
1 Parallel - Fundamental Quartz Crystal, 30.01MHz Nom MXBCFGB30M01 0 Build or Request
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MXBRFGB30M01 MERITEK Electronics Corporation
1 Series - Fundamental Quartz Crystal, 30.01MHz Nom MXBRFGB30M01 0 Build or Request
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MXDAFGB30M0 MERITEK Electronics Corporation
1 Parallel - Fundamental Quartz Crystal, 30MHz Nom MXDAFGB30M0 0 Build or Request
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MXE3FGB30M0 MERITEK Electronics Corporation
1 Parallel - Fundamental Quartz Crystal, 30MHz Nom MXE3FGB30M0 0 Build or Request
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MXB3FGB30M01 MERITEK Electronics Corporation
1 Parallel - Fundamental Quartz Crystal, 30.01MHz Nom MXB3FGB30M01 0 Build or Request
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MXELFGB30M0 MERITEK Electronics Corporation
1 Parallel - Fundamental Quartz Crystal, 30MHz Nom MXELFGB30M0 0 Build or Request
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MXBAFGB30M0 MERITEK Electronics Corporation
1 Parallel - Fundamental Quartz Crystal, 30MHz Nom MXBAFGB30M0 0 Build or Request
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