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FGD3N60LSDTM - onsemi

Description: High Current Capability; Very Low Saturation Voltage : VCE(sat) = 1.2 V at IC = 3 A; High Input Impedance

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FGD3N60LSDTM - onsemi PCB footprint - Other - Other - FGD3N60LSDTM-2
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FGD3N60LSDTM - onsemi  - 3D model - Other - FGD3N60LSDTM-2
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FGD3N60LSDTM Details

  • Manufacturer Part Number:

    FGD3N60LSDTM

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    DPAK-3 / TO-252-3

  • Package Description:

    DPAK-3

  • Manufacturer Package Code:

    369AS

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Manufacturer:

    onsemi

  • YTEOL:

    5

  • Additional Feature:

    LOW CONDUCTION LOSS

  • Case Connection:

    COLLECTOR

  • Collector Current-Max (IC):

    6 A

  • Collector-Emitter Voltage-Max:

    600 V

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • Gate-Emitter Thr Voltage-Max:

    5 V

  • Gate-Emitter Voltage-Max:

    20 V

  • JESD-30 Code:

    R-PSSO-G2

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    2

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    40 W

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    MOTOR CONTROL

  • Transistor Element Material:

    SILICON

  • Turn-off Time-Nom (toff):

    1420 ns

  • Turn-on Time-Nom (ton):

    85 ns

FGD3N60LSDTM Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for the FGD3N60LSDTM is -55°C to 150°C.
  • To ensure proper biasing, the gate-source voltage (Vgs) should be between 2V and 10V, and the drain-source voltage (Vds) should be between 0V and 600V.
  • The recommended gate resistor value for the FGD3N60LSDTM is between 1kΩ and 10kΩ, depending on the specific application and switching frequency.
  • To protect the FGD3N60LSDTM from overvoltage and overcurrent, use a voltage clamp or a transient voltage suppressor (TVS) diode, and consider adding a current sense resistor and a fuse or a current limiter.
  • The maximum allowable power dissipation for the FGD3N60LSDTM is 150W, but this can be increased with proper heat sinking and thermal management.

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FGD3N60LSDTM Overview

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