FGD3N Model Download Search Results

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Image	Part Number	D.S	Description	Package Category	Prices / Stock	Model	Action
	FGD3N60LSDTM onsemi	1	High Current Capability; Very Low Saturation Voltage : VCE(sat) = 1.2 V at IC = 3 A; High Input Impedance	Other	FGD3N60LSDTM	3D model available Symbol and footprint available 3	1 Download Model
	FGD3N60LSDTM-T onsemi	1	Insulated Gate Bipolar Transistor, 6A I(C), 600V V(BR)CES, N-Channel, TO-252AA		FGD3N60LSDTM-T	3D model not available Symbol and footprint not available 0	0 Build or Request
	FGD3N60LSDTF Fairchild Semiconductor Corporation	1	Insulated Gate Bipolar Transistor, 6A I(C), 600V V(BR)CES, N-Channel		FGD3N60LSDTF	3D model not available Symbol and footprint not available 0	0 Build or Request
	FGD3N60UNDF Fairchild Semiconductor Corporation	1	Insulated Gate Bipolar Transistor, 6A I(C), 600V V(BR)CES, N-Channel, TO-252		FGD3N60UNDF	3D model not available Symbol and footprint not available 0	0 Build or Request

	FGD3N60LSDTM Fairchild Semiconductor Corporation	1	Insulated Gate Bipolar Transistor, 6A I(C), 600V V(BR)CES, N-Channel		FGD3N60LSDTM	3D model not available Symbol and footprint not available 0	0 Build or Request
	FGD3N60UNDF onsemi	1	High current capability; High input impedance; Short circuit rated 10us; Fast switching; RoHS compliant		FGD3N60UNDF	3D model available Symbol and footprint not available 1	1 Download Model
	FGD3N60LSDTM-SB82154 Fairchild Semiconductor Corporation	1	Insulated Gate Bipolar Transistor, 6A I(C), 600V V(BR)CES, N-Channel		FGD3N60LSDTM-SB82154	3D model not available Symbol and footprint not available 0	0 Build or Request

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